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1SMB2EZ47 PDF预览

1SMB2EZ47

更新时间: 2024-01-31 11:52:57
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管测试光电二极管
页数 文件大小 规格书
5页 129K
描述
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)

1SMB2EZ47 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.3
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:40 Ω
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:2 W
认证状态:Not Qualified标称参考电压:47 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:10.6 mA
Base Number Matches:1

1SMB2EZ47 数据手册

 浏览型号1SMB2EZ47的Datasheet PDF文件第1页浏览型号1SMB2EZ47的Datasheet PDF文件第2页浏览型号1SMB2EZ47的Datasheet PDF文件第3页浏览型号1SMB2EZ47的Datasheet PDF文件第4页 
APPLICATION NOTE:  
£GTJL is the increase in junction temperature above the  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
£GTJL = £c LAPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ (£GTJL ) may be estimated.  
Lead Temperature, TL, should be determined from:  
TL = £c LAPD + TA  
Changes in voltage, Vz, can then be found from:  
£c LA is the lead-to-ambient thermal resistance (¢J/W)  
and PD is the power dissipation. The value for £c LA will  
£GV = £c VZ £GTJ  
£c VZ , the zener voltage temperature coefficient, is  
vary and depends on the device mounting method.  
found from Figures 5 and 6.  
£c LA is generally 30-40 ¢J/W for the various chips and  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
excursions as low as possible.  
tie points in common use and for printed circuit board  
wiring.  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible to  
the tie point. The thermal mass connected to the tie point  
is normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result  
of pulsed operation once steady-state conditions are  
achieved. Using the measured value of TL, the junction  
temperature may be determined by:  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure 3 be  
exceeded.  
£G  
TJ = TL +  
TJL  

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