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1S60 PDF预览

1S60

更新时间: 2024-02-07 19:29:36
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 999K
描述
暂无描述

1S60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1S60 数据手册

 浏览型号1S60的Datasheet PDF文件第1页 
1S20-1S100  
Schottky Barrier Rectifiers  
Ratings AND Charactieristic Curves  
FIG.2 --MAXIMUM NON-REPETITIVE  
FIG.1 -- FORWARD CURRENT DERATING CURVE  
PEAK FORWARD SURGE CURRENT  
35  
1.0  
Resistive or  
28  
TJ=1250C  
8.3ms Single Half  
Inductive Load  
0.375"(9.5mm)  
Lead Length  
0.75  
0.5  
0.25  
0
sine-wave  
21  
1S20-1S40  
1S50-1S100  
14  
7
0
25  
50  
75 100  
125  
150  
175  
0
1
10  
100  
LEAD TEMPERATURE,  
NUMBEROF CYCLES AT60Hz  
FIG.4--TYPICAL REVERSE CHARACTERISTICS  
FIG.3 --TYPICAL INSTANTANEOUS  
1000  
FORWARD CHARACTERISTICS  
50  
100  
10  
10  
1S50 - 1S60  
1S20 -1S40  
P ulse w idth=300  
1% Duty C ycle  
s
1
TJ=100  
1
1S80 - 1S100  
0.1  
0.1  
TJ=25  
0.01  
0.01  
0
20  
40  
60  
80  
100  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
INSTANTANEOUS FORWARD VOLTAGE,VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE  
FIG.5--TYPICAL JUNCTION CAPACITANCE  
400  
TJ=25  
100  
10  
f=1.0MHz  
Vsig=50mVp-p  
100  
1
10  
0.1  
0.1  
10  
100  
1
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE,VOLTS  
PULSE DURATION,Sec.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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