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1S60-E PDF预览

1S60-E

更新时间: 2024-09-23 13:03:47
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon,

1S60-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.7外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1S60-E 数据手册

 浏览型号1S60-E的Datasheet PDF文件第2页 
1S20  
THRU  
1S60  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low power loss, high efficiency  
* Low leakage  
* Low forward voltage  
* High current capability  
* High speed switching  
* High surge capabitity  
* High reliability  
R-1  
MECHANICAL DATA  
* Case: Molded plastic  
(
)
.025 0.65  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
DIA.  
(
)
.021 0.55  
(
)
.787 20.0  
MIN.  
* Weight: 0.12 gram  
(
)
.126 3.2  
(
)
.106 2.7  
(
)
.102 2.6  
DIA.  
(
)
.091 2.3  
(
)
.787 20.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1S20  
20  
1S30  
30  
1S40  
40  
1S50  
50  
UNITS  
Volts  
Volts  
Volts  
1S60  
60  
V
V
RRM  
RMS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
14  
21  
28  
35  
42  
V
DC  
O
20  
30  
40  
50  
60  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
.375” (9.5mm) lead length  
I
1.0  
35  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
0C/W  
pF  
0 C  
Rθ JA  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
50  
CJ  
J
110  
T
-65 to + 125  
-65 to + 150  
Storage Temperature Range  
T
STG  
-65 to + 150  
0 C  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
1S20  
1S30  
.55  
1S40  
1S50  
UNITS  
Volts  
CHARACTERISTICS  
SYMBOL  
1S60  
Maximum Instantaneous Forward Voltage at 1.0A DC  
.70  
V
F
Maximum Average Reverse Current  
@T  
A
A
= 25oC  
= 100oC  
1.0  
10  
mAmps  
mAmps  
I
R
at Rated DC Blocking Voltage  
@T  
NOTES : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2001-6  

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