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1N758A-PBF PDF预览

1N758A-PBF

更新时间: 2022-12-01 21:49:30
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描述
Zener Diode

1N758A-PBF 数据手册

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1N746-1N759  
SILICON PLANAR ZENER DIODES  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Operating and Storage Temperature  
-65 to +175°C  
Thermal Resistance  
250°C/W junction to lead at 3/8” lead length from body  
≤ 50°C  
Steady State Power  
0.5 Watts at TL  
1.1 Volts  
Forward Voltage @ 200mA  
Solder Temperatures:  
260°C for 10 s (max)  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Normal Zener  
Voltage  
Zener  
Maximum Zener  
Impedance  
Maximum Reverse  
Leakage Current  
VR = 1 Volt  
Maximum  
Zener Current  
Typical  
Temperature  
Coefficient  
Test  
Current  
Part  
Number  
VZ @ lZT  
ZZT @ lZT  
lZM  
Of Zener  
Voltage  
(Note 2)  
lZT  
(Note 3)  
(Note 4)  
(Note 1)  
VOLTS  
2.4  
2.7  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
mA  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
OHMS  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
μA @ 25°C  
100  
μA @ 125°C  
200  
mA  
150  
135  
120  
110  
100  
95  
%/°C  
-.085  
-.080  
-.075  
-.066  
-.058  
-.046  
-.033  
-.015  
±.010  
+.030  
+.049  
+.053  
+.057  
+.060  
+.061  
+.062  
+.062  
1N4370  
1N4371  
1N4372  
1N746  
1N747  
1N748  
1N749  
1N750  
1N751  
1N752  
1N753  
1N754  
1N755  
1N756  
1N757  
1N758  
1N759  
75  
50  
10  
10  
10  
2
150  
100  
30  
30  
30  
30  
30  
20  
20  
20  
20  
20  
20  
20  
20  
20  
85  
2
75  
1
70  
1
65  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
60  
5
55  
6
50  
8
45  
10  
17  
30  
40  
35  
12  
30  
Notes:  
1. Suffix letter A denotes ±5% tolerance, suffix C denotes ±2% tolerance, & suffix D denotes ±1% tolerance.  
2. Voltage measurements to be performed 20 seconds after application of dc current.  
3. Zener impedance derived by superimposing on lZT, a 60cps, rms ac current equal to 10% lZT (2mA ac)  
4. Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal  
equilibrium at the power dissipation of 400mW.  
Rev. 20120328  

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