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1N6382HE3_A/D PDF预览

1N6382HE3_A/D

更新时间: 2024-02-21 05:16:33
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 90K
描述
TVS DIODE 8V 11.6V 1.5KE

1N6382HE3_A/D 数据手册

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End of Life "August 2021" - Alternative Device: "1.5KE Series"  
ICTE5 thru ICTE18C, 1N6373 thru 1N6386  
www.vishay.com  
Vishay General Semiconductor  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
Case Style 1.5KE  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 18 V  
6.0 V to 21.2 V  
9.2 V to 21.2 V  
1500 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
V
BR (bi-directional)  
PPPM  
PD  
6.5 W  
MECHANICAL DATA  
IFSM  
200 A  
Case: 1.5KE, molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional, bi-directional  
1.5KE  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
For bi-directional types, use C suffix (e.g. ICTE18C).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
-55 to +175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 01-Mar-2021  
Document Number: 88356  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

1N6382HE3_A/D 替代型号

型号 品牌 替代类型 描述 数据表
1N6382-E3/73 VISHAY

完全替代

TVS DIODE 8V 11.6V 1.5KE
ICTE8C-E3/73 VISHAY

完全替代

TVS DIODE 8V 11.6V 1.5KE

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