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1N6292CATR PDF预览

1N6292CATR

更新时间: 2024-01-24 01:46:33
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 123K
描述
Trans Voltage Suppressor Diode, 1500W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, CASE 1, 2 PIN

1N6292CATR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
其他特性:FORMED LEAD OPTIONS ARE AVAILABLE最大击穿电压:82.5 V
最小击穿电压:67.5 V击穿电压标称值:75 V
外壳连接:ISOLATED最大钳位电压:108 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:60.7 V
最大反向电流:5 µA子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:PURE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6292CATR 数据手册

 浏览型号1N6292CATR的Datasheet PDF文件第2页 

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