Datasheet > 1N5817

1N5817

更新时间： 2024-05-23 22:21:27

品牌	Logo	应用领域
星海 - CZSTARSEA		/
页数	文件大小	规格书
2页	21K
描述
DO-41

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5817 数据手册

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere

DO-41

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

DIA.

Low power loss,high efficiency

High current capability,low forward voltage drop

High surge capability

0.205 (5.2)

0.160(4.1)

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

260 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.70)

DIA.

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Dimensions in inches and (millimeters)

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5817

1N5818

1N5819

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=90 C

Peak forward surge current

I(AV)

1.0

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.450

0.550

0.600

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

10.0

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

110.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-55 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T06G06A0

STAR SEA

中文翻译

下载PDF

与1N5817相关器件

型号	品牌	获取价格	描述	数据表
1N5817/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819	ETC	获取价格	Schottky barrier diodes

与1N5817相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

36
AIC1781A 电池充电控制器深度解析
2024-09-03

24
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

64
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

69

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5817

1N5817 数据手册

与1N5817相关器件

与1N5817相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5817

1N5817 数据手册

与1N5817相关器件

与1N5817相关文章

您还可以找

您在本页遇到什么问题？