5秒后页面跳转
1N5415-B PDF预览

1N5415-B

更新时间: 2024-02-03 22:53:31
品牌 Logo 应用领域
RECTRON 测试二极管
页数 文件大小 规格书
6页 351K
描述
Rectifier Diode,

1N5415-B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.62
其他特性:LOW LEAKAGE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1500 V
最大反向电流:10 µA反向测试电压:1500 V
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5415-B 数据手册

 浏览型号1N5415-B的Datasheet PDF文件第2页浏览型号1N5415-B的Datasheet PDF文件第3页浏览型号1N5415-B的Datasheet PDF文件第4页浏览型号1N5415-B的Datasheet PDF文件第5页浏览型号1N5415-B的Datasheet PDF文件第6页 
1N5413  
THRU  
1N5415  
SILICON RECTIFIER  
VOLTAGE RANGE 1300 to 1500 Volts CURRENT 3.0 Amperes  
FEATURES  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-201AD  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.052 (1.3)  
.048 (1.2)  
DIA.  
1.0 (25.4)  
MIN.  
.375 (9.5)  
.335 (8.5)  
.220 (5.6)  
.197 (5.0)  
DIA.  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
1N5414  
1N5413  
1300  
910  
1N5415  
1500  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL  
UNITS  
Volts  
Volts  
Volts  
V
V
1400  
980  
RRM  
RMS  
1050  
Maximum DC Blocking Voltage  
V
1500  
1400  
1300  
DC  
O
Maximum Average Forward Rectified Current  
I
Amps  
Amps  
at T = 75 oC  
3.0  
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
150  
FSM  
I2T  
A2S  
93.4  
Typical Current Squared Time  
R
20  
5.0  
JA  
JL  
0C/W  
Typical Thermal Resistance (Note 2)  
R
C
Typical Junction Capacitance (Note 1)  
pF  
0 C  
30  
J
Operating and Storage Temperature Range  
T , T  
J STG  
-55 to + 175  
O
ELECTRICAL CHARACTERISTICS (@T =25 C unless otherwise noted)  
A
1N5413  
1N5414  
1.1  
1N5415  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 3.0A DC  
V
F
@T = 25oC  
uAmps  
mAmps  
A
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
10  
I
R
@T = 15 0 o  
C
A
2.0  
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2. Typical Thermal Resistance : At 9.5mm lead lengths,PCB mounted.  
2018-12  
REV:A  

与1N5415-B相关器件

型号 品牌 获取价格 描述 数据表
1N5415BK CENTRAL

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon,
1N5415E3 MICROSEMI

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, ROHS COMPLIANT, H
1N5415HRV MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2
1N5415LEADFREE CENTRAL

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 P
1N5415-PBF DIGITRON

获取价格

Rectifier Diode
1N5415-T RECTRON

获取价格

暂无描述
1N5415US SENSITRON

获取价格

HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS
1N5415US MICROSEMI

获取价格

VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS
1N5415USE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, MELF-2
1N5415USS SENSITRON

获取价格

暂无描述