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1N5415HRV PDF预览

1N5415HRV

更新时间： 2024-01-03 05:40:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管快速恢复二极管
页数 文件大小 规格书
3页 211K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2

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1N5415HRV 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：O-LELF-R2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
应用：FAST RECOVERY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
最大非重复峰值正向电流：80 A元件数量：1
相数：1端子数量：2
最大输出电流：3 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
参考标准：MIL-19500最大反向恢复时间：0.15 µs
表面贴装：YES端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N5415HRV 数据手册

 浏览型号1N5415HRV的Datasheet PDF文件第2页浏览型号1N5415HRV的Datasheet PDF文件第3页 
1N5415 thru 1N5420  
VOIDLESS-HERMETICALLY SEALED  
FAST RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse  
voltages from 50 to 600 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in surface mount MELF package configurations by adding a “US”  
suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also  
offers numerous other rectifier products to meet higher and lower current ratings  
with various recovery time speed requirements including fast and ultrafast device  
types in both through-hole and surface mount packages.  
“E” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N5415 to 1N5420 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Fast recovery 3 Amp rectifiers 50 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges,  
half-bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 50 to 600 Volts.  
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/411  
Low thermal resistance  
•
Controlled avalanche with peak reverse power  
capability  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N5415US thru 1N5420US)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Junction Temperature: -65oC to +175oC  
Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Thermal Resistance: 20oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
TERMINATIONS: Axial-leads are Tin/Lead  
(Sn/Pb) over Copper except for JANS with solid  
Silver (Ag) and no finish  
•
•
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
Average Rectified Forward Current (IO): 3 Amps @ TA  
= 55ºC and 2 Amps @ TA = 100ºC (see Note 1)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 750 mg  
•
•
Forward Surge Current (8.3 ms half sine): 80 Amps  
Solder temperatures: 260oC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
VF @ 9 A  
MAXIMUM  
REVERSE  
CURRENT  
IR @ VRWM  
MAXIMUM  
REVERSE  
RECOVERY  
AVERAGE  
RECTIFIED  
CURRENT IO  
(NOTE 1)  
TYPE  
VRWM  
V
BR @ 50μA  
TIME t  
rr  
(NOTE 2)  
ns  
MIN.  
MAX.  
25oC  
100oC  
µA  
55oC  
100oC  
AMPS  
VOLTS  
VOLTS  
VOLTS  
µA  
AMPS  
1N5415  
1N5416  
1N5417  
1N5418  
1N5419  
1N5420  
50V  
55V  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
20  
20  
20  
20  
20  
20  
150  
150  
150  
150  
250  
400  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
100V  
200V  
400V  
500V  
600V  
110V  
220V  
440V  
550V  
660V  
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate  
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A  
Copyright © 2008  
6-11-2008 REV B  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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