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1N5350B PDF预览

1N5350B

更新时间: 2024-01-28 09:22:05
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
5页 3262K
描述
暂无描述

1N5350B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, CASE 017AA-01, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.09Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:170929
Samacsys Pin Count:2Samacsys Part Category:Zener Diode
Samacsys Package Category:Diodes, Axial Diameter Horizontal MountingSamacsys Footprint Name:AXIAL LEAD CASE 017AA ISSUE O
Samacsys Released Date:2015-11-29 16:52:29Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:2.5 ΩJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified标称参考电压:13 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40最大电压容差:5%
工作测试电流:100 mABase Number Matches:1

1N5350B 数据手册

 浏览型号1N5350B的Datasheet PDF文件第2页浏览型号1N5350B的Datasheet PDF文件第3页浏览型号1N5350B的Datasheet PDF文件第4页浏览型号1N5350B的Datasheet PDF文件第5页 
1N5333B-1N5388B  
Zener Diode  
POWER DISSIPATION: 5.0 W  
DO-15  
Features  
Silicon planar power zener diodes  
For use in stabilizing and clipping curcuits with high  
power rating.  
Standard zener voltage tolerance is ±10%. Add  
suffix"B" for ±5% tolerance. other zener voltage  
and tolerances are available upon request.  
Mechanical Data  
Case:DO-15  
Dimensions in inches and (millimeters)  
Polarity: cathode Band  
Marking: type number  
Approx. weight: 0.40grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
Zener current (see Table "Characteristics")  
DC pow er dissipation @ TL=75, measure at zero lead length (Fig.1)  
derate above 75 (NOTE1)  
5.0  
40.0  
W
mW  
PD  
Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated  
IFSM  
see fig.5  
-55---+150  
-55---+150  
A
load (JEDEC Method)(NOTE1,2)  
Junction temperature  
TJ  
Ts  
Storage temperature range  
NOTES: (1) Mounted on 8.0mm2 copper pads to each terminal.  
(2) 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minute maximum.  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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