1N5282TR

更新时间： 2024-02-05 11:44:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		整流二极管信号二极管
页数	文件大小	规格书
2页	64K
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数据手册

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1N5282TR 数据手册

1N5282

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

200

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

4.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

500

300

R_θJA

C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max Units

V_R

V_F

Breakdown Voltage

I = 5

Forward Voltage

I_F= 0.1 mA

I_F= 1.0 mA

I_F= 10 mA

I_F= 100 mA

I_F= 300 mA

I_F= 500 mA

V_R= 55 V

0.45

0.55

0.67

0.80

0.92

1.05

0.49

0.60

0.725

0.90

1.1

1.3

100

I_R

Reverse Current

100

V = 55 V, T = 150 C

C_T

t_rr1

Total Capacitance

V_R= 0, f = 1.0 MHz

2.5

Reverse Recovery Time

I_F= I_R= 10 mA, R_L= 100 Ω

I_rr= 1.0mA

t_rr2

Reverse Recovery Time

I_F= I_R= 200 mA, R_L= 100 Ω

I_rr= 20mA

2002 Fairchild Semiconductor Corporation

1N5282, Rev. A

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