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1N5231BRL2 PDF预览

1N5231BRL2

更新时间: 2024-01-06 15:44:21
品牌 Logo 应用领域
TAK_CHEONG 测试二极管
页数 文件大小 规格书
10页 473K
描述
Zener Diode, 5.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS, DO-204AH, 2 PIN

1N5231BRL2 技术参数

生命周期:Transferred包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.55
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-204AH
JESD-30 代码:O-LALF-W2膝阻抗最大值:1600 Ω
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:5.1 V最大反向电流:5 µA
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
电压温度Coeff-Max:1.53 mV/ °C最大电压容差:5%
工作测试电流:20 mABase Number Matches:1

1N5231BRL2 数据手册

 浏览型号1N5231BRL2的Datasheet PDF文件第1页浏览型号1N5231BRL2的Datasheet PDF文件第3页浏览型号1N5231BRL2的Datasheet PDF文件第4页浏览型号1N5231BRL2的Datasheet PDF文件第5页浏览型号1N5231BRL2的Datasheet PDF文件第6页浏览型号1N5231BRL2的Datasheet PDF文件第7页 
1N5221B through 1N5281B Series  
ELECTRICAL CHARACTERISTICS (TA  
= 25ºC unless  
otherwise noted. Based on DC measurements at thermal  
equilibrium; lead length = 3/8”; thermal resistance of heat sink =  
30°C/W, VF = 1.1 V Max @ IF = 200mA for all types)  
Symbol  
Parameter  
VZ  
IZT  
ZZT  
IZk  
IR  
Reverse Zener Voltage @ IZT  
Reverse Zener Current  
Maximum Zener Impedance @ IZT  
Reverse Zener Current  
Reverse Leakage Current @ VR  
Reverse Voltage  
VR  
IF  
Forward Current  
VF  
θVZ  
Forward Voltage @ IF  
Maximum Zener Voltage Temperature Coefficient  
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types)  
(Note 3.)  
(Note 4.)  
Zener Voltage  
VZ (Volts)  
Nom  
Zener Impedance  
ZZT @ IZT ZZK @ IZK  
)  
Leakage Current  
IR @ VR  
θVZ  
@ IZT  
(mA)  
(Note 5.)  
(%/ºC)  
Device  
Device  
Min  
Max  
(mA)  
(Volts)  
Marking  
(
()  
(µA)  
(Note 2.)  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
2.28  
2.375  
2.565  
2.66  
2.4  
2.5  
2.7  
2.8  
3
2.52  
2.625  
2.835  
2.94  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
30  
30  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
1200  
1250  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
100  
100  
75  
75  
50  
25  
15  
10  
5
1
1
-0.085  
-0.085  
-0.08  
1
1
-0.08  
2.85  
3.15  
1
-0.075  
-0.07  
1N5226B 1N5226B  
1N5227B 1N5227B  
1N5228B 1N5228B  
3.135  
3.42  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6
3.465  
3.78  
1
1
-0.065  
-0.06  
3.705  
4.085  
4.465  
4.845  
5.32  
4.095  
4.515  
4.935  
5.355  
5.88  
1
1N5229B  
1N5230B  
1N5229B  
1N5230B  
1
±0.055  
±0.03  
±0.03  
+0.038  
+0.038  
+0.045  
+0.05  
5
2
1N5231B 1N5231B  
1N5232B 1N5232B  
5
2
5
3
1N5233B  
1N5233B  
5.7  
6.3  
5
3.5  
4
1N5234B 1N5234B  
1N5235B 1N5235B  
5.89  
6.2  
6.8  
6.51  
7
5
6.46  
7.14  
5
3
5
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)  
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.  
3. ZENER VOLTAGE (VZ) MEASUREMENT  
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C  
±1°C and 3/8” lead length.  
4. ZENER IMPEDANCE (ZZ) DERIVATION  
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits  
are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz.  
5. TEMPERATURE COEFFICIENT (θVZ  
)
Test conditions for temperature coefficient are as follows:  
A. IZT = 7.5mA, T1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)  
B. IZT = Rated IZT, T1 = 25°C, T2 = 125°C (1N5243B through 1N5281B)  
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient  
temperature.  
http://www.takcheong.com  
2

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