1N5222B-TAP

更新时间： 2024-02-12 09:30:02

品牌	Logo	应用领域
威世 - VISHAY		二极管测试
页数	文件大小	规格书
4页	37K
描述
Zener Diode, 2.5V V(Z), 5%, 0.5W,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5222B-TAP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-35
包装说明：	ROHS COMPLIANT, GLASS PACKAGE-2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.56
Is Samacsys：	N	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-35
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
标称参考电压：	2.5 V	表面贴装：	NO
技术：	ZENER	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	20%
工作测试电流：	20 mA	Base Number Matches：	1

1N5222B-TAP 数据手册

1N5221B...1N5267B

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.de • FaxBack +1-408-970-5600

4 (4)

Document Number 85588

Rev. 2, 06-Aug-99

1 2 34

下载PDF

与1N5222B-TAP相关器件

型号	品牌	描述	获取价格	数据表
1N5222B-TB	WTE	Zener Diode	获取价格
1N5222BTR	CENTRAL	Zener Diode, 2.5V V(Z), 0.5W, Silicon, Unidirectional, DO-35,	获取价格
1N5222BTR	MICROSEMI	Zener Diode, 2.5V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLA	获取价格
1N5222B-TR	VISHAY	Zener Diode, 2.5V V(Z), 5%, 0.5W,	获取价格
1N5222BTRE3	MICROSEMI	Zener Diode, 2.5V V(Z), 5%, 0.5W,	获取价格
1N5222BTRLEADFREE	CENTRAL	Zener Diode, 2.5V V(Z), 0.5W, Silicon, Unidirectional, DO-35,	获取价格

与1N5222B-TAP相关文章

123
2024-05-08

1
ADC0809逐次逼近寄存器型模数转换器：资料手册参数分析
2024-05-08

4
AD9361捷变收发器：全面参数解析与关键特性概览
2024-05-08

2
IRF3205功率MOSFET：资料手册参数分析
2024-05-08

2

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5222B-TAP

1N5222B-TAP 技术参数

1N5222B-TAP 数据手册

与1N5222B-TAP相关器件

与1N5222B-TAP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5222B-TAP

1N5222B-TAP 技术参数

1N5222B-TAP 数据手册

与1N5222B-TAP相关器件

与1N5222B-TAP相关文章

您还可以找

您在本页遇到什么问题？