Datasheet > 1N4735A-TAP

1N4735A-TAP

更新时间： 2024-02-24 09:36:00

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	34K
描述
Zener Diode, 6.2V V(Z), 5%, 1W,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N4735A-TAP 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.89
配置：	SINGLE	二极管类型：	ZENER DIODE
JESD-609代码：	e0	元件数量：	1
最高工作温度：	200 °C	最大功率耗散：	1 W
标称参考电压：	6.2 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
最大电压容差：	5%

1N4735A-TAP 数据手册

1N4728A...1N4761A

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

4 (4)

Document Number 85587

Rev. A3, 09-Mar-01

1 2 34

下载PDF

与1N4735A-TAP相关器件

型号	品牌	描述	获取价格	数据表
1N4735A-TB	WTE	Zener Diode, 6.2V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, PLASTIC PACKAGE-2	获取价格
1N4735A-TB	PANJIT	Zener Diode, 6.2V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, PLASTIC PACKAGE-2	获取价格
1N4735A-TB-LF	WTE	Zener Diode, 6.2V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, PLASTIC PA	获取价格
1N4735AT-G	COMCHIP	Zener Diode,	获取价格
1N4735ATR	FAIRCHILD	1N4728A - 1N4758A Zener Diodes	获取价格
1N4735ATR	ONSEMI	Zener 1W 5%	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4735A-TAP

1N4735A-TAP 技术参数

1N4735A-TAP 数据手册

与1N4735A-TAP相关器件

与1N4735A-TAP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4735A-TAP

1N4735A-TAP 技术参数

1N4735A-TAP 数据手册

与1N4735A-TAP相关器件

与1N4735A-TAP相关文章

您还可以找

您在本页遇到什么问题？