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1N4732DRL2 PDF预览

1N4732DRL2

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 82K
描述
4.7V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, GLASS, CASE 59-03, 2 PIN

1N4732DRL2 数据手册

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GENERAL DATA — 500 mW DO-35 GLASS  
APPLICATION NOTE  
Since the actual voltage available from a given zener diode  
temperature and may be found as follows:  
is temperature dependent, it is necessary to determine junc-  
tiontemperatureunderanysetofoperatingconditionsinorder  
to calculate its value. The following procedure is recom-  
mended:  
T = θ P .  
JL JL D  
θ
may be determined from Figure 3 for dc power condi-  
JL  
tions. For worst-case design, using expected limits of I , limits  
Z
ofP andtheextremesofT (T )maybeestimated.Changes  
D
J
J
Lead Temperature, T , should be determined from:  
L
in voltage, V , can then be found from:  
Z
T = θ  
L
P
LA D  
+ T .  
A
V = θ  
T .  
J
VZ  
, the zener voltage temperature coefficient, is found from  
θ
isthelead-to-ambientthermalresistance(°C/W)andP is  
LA  
D
θ
VZ  
Figure 2.  
Under high power-pulse operation, the zener voltage will  
the power dissipation. The value forθ willvaryanddepends  
onthedevicemountingmethod.θ isgenerally30to40°C/W  
for the various clips and tie points in common use and for  
printed circuit board wiring.  
LA  
LA  
vary with time and may also be affected significantly by the  
zenerresistance. Forbestregulation, keepcurrentexcursions  
as low as possible.  
Surge limitations are given in Figure 5. They are lower than  
would be expected by considering only junction temperature,  
as current crowding effects cause temperatures to be ex-  
tremely high in small spots, resulting in device degradation  
should the limits of Figure 5 be exceeded.  
The temperature of the lead can also be measured using a  
thermocoupleplacedontheleadascloseaspossibletothetie  
point. The thermal mass connected to the tie point is normally  
large enough so that it will not significantly respond to heat  
surges generated in the diode as a result of pulsed operation  
once steady-state conditions are achieved. Using the mea-  
sured value of T , the junction temperature may be deter-  
L
mined by:  
T = T + T .  
JL  
J
L
T is the increase in junction temperature above the lead  
JL  
Motorola TVS/Zener Device Data  
500 mW DO-35 Glass Data Sheet  
6-118  

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