Datasheet > 1N4730ATA2

1N4730ATA2

更新时间： 2024-01-13 21:46:20

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		测试二极管
页数	文件大小	规格书
6页	55K
描述
3.9V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, GLASS, CASE 59-03, 2 PIN

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1N4730ATA2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-204
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.06
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	9 Ω
JEDEC-95代码：	DO-41	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e3	元件数量：	1
端子数量：	2	最高工作温度：	200 °C
最低工作温度：	-65 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
标称参考电压：	3.9 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子面层：	TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	5%	工作测试电流：	64 mA
Base Number Matches：	1

1N4730ATA2 数据手册

GENERAL DATA — 500 mW DO-35 GLASS

APPLICATION NOTE

Since the actual voltage available from a given zener diode

temperature and may be found as follows:

is temperature dependent, it is necessary to determine junc-

tiontemperatureunderanysetofoperatingconditionsinorder

to calculate its value. The following procedure is recom-

mended:

∆T = θ P .

JL JL D

may be determined from Figure 3 for dc power condi-

tions. For worst-case design, using expected limits of I , limits

ofP andtheextremesofT (∆T )maybeestimated.Changes

Lead Temperature, T , should be determined from:

in voltage, V , can then be found from:

T = θ

LA D

+ T .

∆V = θ

∆T .

, the zener voltage temperature coefficient, is found from

isthelead-to-ambientthermalresistance(°C/W)andP is

Figure 2.

Under high power-pulse operation, the zener voltage will

the power dissipation. The value forθ willvaryanddepends

onthedevicemountingmethod.θ isgenerally30to40°C/W

for the various clips and tie points in common use and for

printed circuit board wiring.

vary with time and may also be affected significantly by the

zenerresistance. Forbestregulation, keepcurrentexcursions

as low as possible.

Surge limitations are given in Figure 5. They are lower than

would be expected by considering only junction temperature,

as current crowding effects cause temperatures to be ex-

tremely high in small spots, resulting in device degradation

should the limits of Figure 5 be exceeded.

The temperature of the lead can also be measured using a

thermocoupleplacedontheleadascloseaspossibletothetie

point. The thermal mass connected to the tie point is normally

large enough so that it will not significantly respond to heat

surges generated in the diode as a result of pulsed operation

once steady-state conditions are achieved. Using the mea-

sured value of T , the junction temperature may be deter-

mined by:

T = T + ∆T .

∆T is the increase in junction temperature above the lead

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet

6-5

1 2 3 456

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与1N4730ATA2相关器件

型号	品牌	描述	获取价格	数据表
1N4730A-TAP	VISHAY	Zener Diode, 3.9V V(Z), 5%, 1W,	获取价格
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1N4730A-TB	PANJIT	暂无描述	获取价格
1N4730A-TB-LF	PANJIT	Zener Diode, 3.9V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, PLASTIC PA	获取价格
1N4730A-TB-LF	WTE	Zener Diode, 3.9V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, PLASTIC PA	获取价格
1N4730A-TP	MCC	Zener Diode, 3.9V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, HEREMATIC	获取价格

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