Datasheet > 1N4728DTA2

1N4728DTA2

更新时间： 2024-02-23 19:11:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		测试二极管
页数	文件大小	规格书
8页	82K
描述
Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41, GLASS, CASE 59-03, 2 PIN

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1N4728DTA2 技术参数

生命周期：	Obsolete	零件包装代码：	DO-41
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.57
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-41
JESD-30 代码：	O-LALF-W2	膝阻抗最大值：	400 Ω
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
标称参考电压：	3.3 V	最大反向电流：	100 µA
表面贴装：	NO	技术：	ZENER
端子形式：	WIRE	端子位置：	AXIAL
最大电压容差：	1%	工作测试电流：	76 mA
Base Number Matches：	1

1N4728DTA2 数据手册

GENERAL DATA — 500 mW DO-35 GLASS

APPLICATION NOTE

Since the actual voltage available from a given zener diode

temperature and may be found as follows:

is temperature dependent, it is necessary to determine junc-

tiontemperatureunderanysetofoperatingconditionsinorder

to calculate its value. The following procedure is recom-

mended:

∆T = θ P .

JL JL D

may be determined from Figure 3 for dc power condi-

tions. For worst-case design, using expected limits of I , limits

ofP andtheextremesofT (∆T )maybeestimated.Changes

Lead Temperature, T , should be determined from:

in voltage, V , can then be found from:

T = θ

LA D

+ T .

∆V = θ

∆T .

, the zener voltage temperature coefficient, is found from

isthelead-to-ambientthermalresistance(°C/W)andP is

Figure 2.

Under high power-pulse operation, the zener voltage will

the power dissipation. The value forθ willvaryanddepends

onthedevicemountingmethod.θ isgenerally30to40°C/W

for the various clips and tie points in common use and for

printed circuit board wiring.

vary with time and may also be affected significantly by the

zenerresistance. Forbestregulation, keepcurrentexcursions

as low as possible.

Surge limitations are given in Figure 5. They are lower than

would be expected by considering only junction temperature,

as current crowding effects cause temperatures to be ex-

tremely high in small spots, resulting in device degradation

should the limits of Figure 5 be exceeded.

The temperature of the lead can also be measured using a

thermocoupleplacedontheleadascloseaspossibletothetie

point. The thermal mass connected to the tie point is normally

large enough so that it will not significantly respond to heat

surges generated in the diode as a result of pulsed operation

once steady-state conditions are achieved. Using the mea-

sured value of T , the junction temperature may be deter-

mined by:

T = T + ∆T .

∆T is the increase in junction temperature above the lead

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet

6-118

1 2 345 6 7 8

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型号	品牌	描述	获取价格	数据表
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1N4728DUR-1	MICROSEMI	Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,	获取价格
1N4728DUR-1TR	MICROSEMI	Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,	获取价格
1N4728DUR-1TRE3	MICROSEMI	Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETI	获取价格
1N4728DURE3	MICROSEMI	Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETI	获取价格

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