Datasheet > 1N4153

1N4153

更新时间： 2023-12-06 20:01:40

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
1页	266K
描述
Switching Diodes Switch detector

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4153 数据手册

1N914 - 1N4454

SMALL SIGNAL SWITCHING DIODES

DO-35(GLASS)

Features

Silicon epitaxial planar diode

Fast swithching diodes

1.0 2(26.0)

MIN.

Mechanical Data

0.079(2.0)

MAX

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

0.165 (4.2)

MAX

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

Peak

Max.

Aver.

Max.

Forward

Voltage

drop

Max.

reverse

Power Junction

Reverse

Max. Reverse Recovery Time

Type

voltage Rectified Dissip tempera-

VRM(V) Current At 25 ture

I(AV)Ma Ptot(mW) TJ

Current

at IF

at trr(ns)

Test conditions

(V) (mA) (nA) VR(V) Max.

1N914

100

150

200

150

1502)

150

500

400

500

400

200

175

200

175

1.0

4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=IR=10 to 200mA, to 0.1 IF

1N4149

1N4150

1N4152

1N4153

1N4154

1N4447

1N4449

1N4450

1N4451

1N4453

1N4454

1.0

200

0.10

100

0.55

1.0

2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=IR=10mA to, IR=1mA

100

1.0

0.54

0.50

0.55

1.0

0.50

0.10

0.01

10 IF=IR=10mA to, IR=1mA

100

4.0

IF=IR=10mA to, IR=1mA

Notes:

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes

in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 JA=400K/W

www.sunmate.tw

1 of 1

下载PDF

与1N4153相关器件

型号	品牌	描述	获取价格	数据表
1N4153.TR	TI	75V, SILICON, SIGNAL DIODE, DO-35	获取价格
1N4153_1	MICROSEMI	SWITCHING DIODES	获取价格
1N4153-1	CDI-DIODE	SWITCHING DIODES	获取价格
1N4153-1	NJSEMI	Diode Switching 75V 0.15A 2-Pin DO-35	获取价格
1N4153-1	MICROSEMI	Silicon Switching Diode DO-35 Glass Package	获取价格
1N4153113	NXP	DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	获取价格