Datasheet > 1N4007H-T-B

1N4007H-T-B

更新时间： 2024-02-11 05:21:47

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	444K
描述
Rectifier Diode,

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技术参数
数据手册

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1N4007H-T-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1N4007H-T-B 数据手册

M C C

1N4001H-T

THRU

1N4007H-T

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Low Current Leakage

Metalurgically Bonded Construction

High Junction Temperature

1 Amp Rectifier

50 - 1000 Volts

Maximum Ratings

DO-41

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance: 25°C/W Junction to Lead at 0.375"

Lead Length P.C.B. Mounted

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N4001H-T

1N4002H-T

1N4003H-T

1N4004H-T

1N4005H-T

1N4006H-T

1N4007H-T

---

35V

70V

50V

100V

200V

400V

600V

800V

1000V

100V

200V

400V

600V

800V

1000V

Cathode

140V

280V

420V

560V

700V

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A= 75°C

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

I_FM= 1.0A;

T_J= 25°C*

DIMENSIONS

INCHES

MIN

.166

.080

.028

MIN

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

5.0mA

300mA

T_J= 25°C

T_J= 150°C

4.10

2.00

.70

1.000

25.40

---

Typical Junction

Capacitance

Maximum Reverse

Recovery Time

C_J

15pF

Measured at

1.0MHz, V_R=4.0V

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

T_rr

2.0us

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

Revision: 2

2004/03/30

12 3

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