Datasheet > 1N4006T50R

1N4006T50R

更新时间： 2023-01-03 03:57:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	43K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, D4, 2 PIN

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1N4006T50R 数据手册

1N4001 - 1N4007

Features

• Low forward voltage drop.

• High surge current capability.

DO-41

COLOR BAND DENOTES CATHODE

General Purpose Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

4001 4002 4003 4004 4005 4006 4007

V_RRM

I_F(AV)

Peak Repetitive Reverse Voltage

100

200

400

600

800 1000

Average Rectified Forward Current,

.375 " lead length @ T_A= 75°C

Non-repetitive Peak Forward Surge

Current

1.0

I_FSM

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

-55 to +175

°C

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

3.0

R_θJA

°C/W

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Device

Units

4001 4002 4003 4004 4005 4006 4007

V_F

I_rr

Forward Voltage @ 1.0 A

1.1

Maximum Full Load Reverse Current, Full

µA

Cycle

T_A= 75°C

I_R

5.0

500

Reverse Current @ rated V_RT = 25 C

T = 100 C

C_T

Total Capacitance

V_R= 4.0 V, f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

1N4001-1N4007, Rev. C

12 3

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