Datasheet > 1GG6-8070

1GG6-8070

更新时间： 2024-01-28 15:38:27

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
4页	305K
描述
Wide Band Low Power Amplifier, 40000MHz Min, 68000MHz Max, 1 Func, GAAS, 0.0567 X 0.0307 INCH, 0.0031 INCH HEIGHT, DIE

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1GG6-8070 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	68000 MHz	最小工作频率：	40000 MHz
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

1GG6-8070 数据手册

The RF input matching circuity

gives a 50Ω DC and RF path to

ground. A DC blocking capacitor

should be used in the RF input

transmission line. Any DC volt-

age applied to the RF input must

be maintained below 1V; DC

voltage on the RF output can

range from –7V to +13V.

tach requires 69°C ambient. It is

recommended that the RF input

and output connectors be made

using 500 lines per inch, or

equivalent gold wire mesh. The

RF connections should be kept

as short as possible to minimize

inductance. The DC bias supply

wires can be 0.7 mil diameter

gold.

Applications

The TC956 amplifier offers high

gain and power to mm frequen-

cies. It can be used in mm–wave

products with high power re-

quirements, or in conjunction

with a TC958 or TC906 in a

banded design.

Biasing and Operation

No ground wires are needed

since ground connections are

made with plated through–holes

to the backside of the device.

MMIC ESD precautions, han-

dling considerations, and die at-

tach and bonding methods are

critical factors in successful

GaAs MMIC performance and

reliability.

The recommended bias condi-

tions are to connect the drains

to a shared 3V supply and con-

nect all gate pads to a shared,

adjustable negative voltage. The

gate voltage is adjusted for total

drain supply current of 330 mA.

Drain pains 2–4 are internally

connected; either multiple

bonds or a single bond is accept-

able. Positive gate voltage can

generate drain currents as high

as 700 mA, so be sure that the

bonds have sufficient capacity.

Likewise, all gates can be con-

trolled with a single bond wire

Reliability limits assume long–

term operation into a 50Ω

match, with short–term excur-

sions to an open circuit. Reli-

ability will be degraded with

long–term operation into an

open circuit.

Additional Information

Agilent application note #54,

"GaAs MMIC ESD, Die Attach

and Bonding Guidelines" pro-

vides additional information on

these subjects.

Assembly Techniques

For most applications, we rec-

ommend solder die attach. Reli-

ability goals are modeled using

solder attach to an infinite heat

sink at 85°C ambient. Epoxy at-

attached to V

VD1

VD2

VD4

VD3

GND

Total FET Width=1040 um

Total Gm=513 mSie

RFIN

RFOUT

600 Ohm

VG1

VG2

VG4

VG3

GND

Figure 1.

1GG6-4070 Schematic

Figure 1.

1GG6-8070 Schematic

TC956/rev.3.2

1 234

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