Datasheet > 1GG6-8070

1GG6-8070

更新时间： 2024-02-14 13:27:16

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
4页	305K
描述
Wide Band Low Power Amplifier, 40000MHz Min, 68000MHz Max, 1 Func, GAAS, 0.0567 X 0.0307 INCH, 0.0031 INCH HEIGHT, DIE

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技术参数
数据手册

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1GG6-8070 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	68000 MHz	最小工作频率：	40000 MHz
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

1GG6-8070 数据手册

[1]

DC Specifications/Physical Properties

Symbol

Parameters/Conditions

Min.

Typ.

Max.

Units

Volts

V_DD

I_DD

V_GG

V_P

Drain Supply Operating Voltage

Drain Supply Operating Current (V_DD= 3.0 V, V_GG= –0.1V)

Gate Supply Operating Voltage (V_DD= 3.0 V, I_DD= 330 mA)

Gate Supply Pinch–Off Voltage (V_DD= 3.0 V, I_DD= <17 mA)

330

–0.1

–1.2

–.6

Volts

Thermal Resistance

°C/Watt

°C

–bs

(Channel to Backside at T_ch= 160°C)

Channel Temperature^[2](T_A= 75°C, MTTF >10⁶hours,

T_ch

Notes:

160

_DD= 3.0 V, I_DD= 330 mA)

1. Measured on wafer with T

2. Derate MTTF by a factor of 2 for every 8°C above T_ch.

= 25°C unless otherwise noted.

chuck

[1]

RF Specifications

Symbol

Parameters/Conditions

Min.

Typ.

Max. Units

GHz

Guaranteed Bandwidth

Small–Signal Gain

Gain

18.0

±1.3

Flatness

RL_IN

Small–Signal Gain Flatness

Input Return Loss

RL_OUT

Isolation

P_–1dB

P_sat

Output Return Loss

Reverse Isolation

Output Power at 1 dB Gain Compression

Saturated Output Power

Noise Figure

13^[2]

16^[2]

dBm

17.6

Notes:

1. Measured on wafer with T_chuck= 25°C. Numbers given are minimum across the 40–67 band unless otherwise noted.

2. On–wafer gain and power measurements at 68 GHz have a measurement uncertainty of 1.5 dB. The number shown does not include guardband.

TC956/rev.3.2

123 4

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