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1SV228-5

更新时间: 2024-02-02 20:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
4页 149K
描述
DIODE 38.84 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-3G1F, SC-59, 3 PIN, Variable Capacitance Diode

1SV228-5 技术参数

生命周期:Active零件包装代码:SC-59
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
Is Samacsys:N其他特性:CAPACITANCE MATCHED TO 3%
配置:COMMON CATHODE, 2 ELEMENTS二极管电容容差:1%
最小二极管电容比:2.1标称二极管电容:38.84 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1SV228-5 数据手册

 浏览型号1SV228-5的Datasheet PDF文件第2页浏览型号1SV228-5的Datasheet PDF文件第3页浏览型号1SV228-5的Datasheet PDF文件第4页 
1SV228  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
1SV228  
Electronic Tuning Applications of FM Receivers  
Unit: mm  
Low r : r = 0.3 (typ.)  
s s  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
15  
125  
V
R
Junction temperature  
Storage temperature  
T
j
°C  
°C  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
SC-59  
TOSHIBA  
1-3G1F  
Weight: 0.013 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 10 μA  
R
15  
10  
V
R
Reverse current  
Capacitance  
I
V
V
V
= 15 V  
nA  
pF  
pF  
Ω
R
R
R
R
C
C
= 3 V, f = 1 MHz  
= 8 V, f = 1 MHz  
(Note 1) 28.5  
(Note 1) 11.7  
30.5  
12.7  
32.5  
13.7  
2.6  
3 V  
8 V  
Capacitance  
Capacitance ratio  
Series resistance  
C
/C  
3 V 8 V  
(Note 1)  
(Note 1)  
2.1  
r
s
V
= 3 V, f = 100 MHz  
0.3  
0.5  
R
Note 1: Characteristics between anode 1 and anode 2  
Marking  
1
2007-11-01  

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