Datasheet > 1N5376B

1N5376B

更新时间： 2024-02-15 15:48:16

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管齐纳二极管测试
页数	文件大小	规格书
5页	428K
描述
5 Watt Zener Diode 5.1 to 200 Volts

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1N5376B 技术参数

生命周期：	Obsolete	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.64	Is Samacsys：	N
其他特性：	FORMED LEAD OPTIONS ARE AVAILABLE	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
标称参考电压：	87 V	最大反向电流：	0.5 µA
表面贴装：	NO	技术：	ZENER
端子形式：	WIRE	端子位置：	AXIAL
最大电压容差：	5%	工作测试电流：	15 mA
Base Number Matches：	1

1N5376B 数据手册

1N5338B THRU 1N5388B

3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave

current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge

current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on

logarithmic paper. Examples of this, using the 6.8v , is shown in Figure 6. Mounting

contact located as specified in Note 3. (T_A=25 ).

4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made

at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the

same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms.

(T_A=25C ). Mounting contact located as specified in Note2.

5. MAXIMUM REGULATOR CURRENT (I_ZM) - The maximum current shown is based on the maximum voltage of a

5% type unit. Therefore, it applies only to the B-suffix device. The actual I_ZMfor any device may not exceed the

value of 5 watts divided by the actual Vz of the device. T_L=75Cat maximum from the device body.

APPLICATION NOTE:

Since the actual voltage available from a given Zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

For worst‐case design, using expected limits of I , limits

of P and the extremes of T (DT ) may be estimated.

Changes in voltage, V , can then be found from:

DV = q_VZDT_J

, the Zener voltage temperature coefficient, is found

from Figures 2 and 3.

Lead Temperature, T , should be determined from:

T_L= q_LAP_D+ T_A

Under high power‐pulse operation, the Zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

power dissipation.

is the lead‐to‐ambient thermal resistance and P is the

Junction Temperature, T , may be found from:

T_J= T_L+ DT_JL

Data of Figure 4 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 5 be exceeded.

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 4 for a train of

power pulses or from Figure 1 for dc power.

DT_JL= q_JLP_D

KI SEMICONDUCTOR

1 234 5

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1N5376B(87V)	ETC	Zener Diodes	获取价格
1N5376B/TR8	MICROSEMI	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN	获取价格
1N5376B-A	DIODES	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional	获取价格
1N5376B-B	DIODES	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional	获取价格
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