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1N5365B PDF预览

1N5365B

更新时间: 2024-02-22 14:15:19
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管齐纳二极管测试
页数 文件大小 规格书
5页 428K
描述
5 Watt Zener Diode 5.1 to 200 Volts

1N5365B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.48外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
标称参考电压:36 V表面贴装:NO
技术:ZENER端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:20%
工作测试电流:30 mABase Number Matches:1

1N5365B 数据手册

 浏览型号1N5365B的Datasheet PDF文件第1页浏览型号1N5365B的Datasheet PDF文件第2页浏览型号1N5365B的Datasheet PDF文件第3页浏览型号1N5365B的Datasheet PDF文件第4页 
RATING AND CHARACTERISTICS CURVES  
1N5338B THRU 1N5388B  
ZENER VOLTAGE VERSUS ZENER CURRENT  
(FIGURES 7,8)  
30  
20  
VZ = 6.8V  
TC = 25  
T = 25  
1000  
10  
5
PLOTTED FROM INFORMATION  
100  
10  
GIVEN IN FIGURE 5  
2
1
0.5  
1
0.2  
0.1  
0.1  
1
2
3
4
5
6
7
8
9
10  
1
10  
100  
1000  
VZ, ZENER VOLTAGE (VOLTS)  
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE  
WIDTH(SEE NOTE 3)  
Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT  
VZ = 6.8 THRU 10 VOLTS  
1000  
T = 25  
100  
10  
1
0.1  
10  
20  
30  
40  
50  
60  
70  
80  
VZ, ZENER VOLTAGE (VOLTS)  
Fig. 8-ZENER VOLTAGE VERSUS ZENER CURRENT  
VZ = 11 THRU 51 VOLTS  
*** Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are  
lower than would be expected by considering only junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be  
exceeded  
KI SEMICONDUCTOR  

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