Datasheet > 1N5362B

1N5362B

更新时间： 2024-01-11 00:19:29

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管齐纳二极管
页数	文件大小	规格书
5页	428K
描述
5 Watt Zener Diode 5.1 to 200 Volts

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1N5362B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.24
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

1N5362B 数据手册

1N5338B THRU 1N5388B

3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave

current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge

current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on

logarithmic paper. Examples of this, using the 6.8v , is shown in Figure 6. Mounting

contact located as specified in Note 3. (T_A=25 ).

4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made

at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the

same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms.

(T_A=25C ). Mounting contact located as specified in Note2.

5. MAXIMUM REGULATOR CURRENT (I_ZM) - The maximum current shown is based on the maximum voltage of a

5% type unit. Therefore, it applies only to the B-suffix device. The actual I_ZMfor any device may not exceed the

value of 5 watts divided by the actual Vz of the device. T_L=75Cat maximum from the device body.

APPLICATION NOTE:

Since the actual voltage available from a given Zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

For worst‐case design, using expected limits of I , limits

of P and the extremes of T (DT ) may be estimated.

Changes in voltage, V , can then be found from:

DV = q_VZDT_J

, the Zener voltage temperature coefficient, is found

from Figures 2 and 3.

Lead Temperature, T , should be determined from:

T_L= q_LAP_D+ T_A

Under high power‐pulse operation, the Zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

power dissipation.

is the lead‐to‐ambient thermal resistance and P is the

Junction Temperature, T , may be found from:

T_J= T_L+ DT_JL

Data of Figure 4 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 5 be exceeded.

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 4 for a train of

power pulses or from Figure 1 for dc power.

DT_JL= q_JLP_D

KI SEMICONDUCTOR

1 234 5

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与1N5362B相关器件

型号	品牌	描述	获取价格	数据表
1N5362B(28V)	ETC	Zener Diodes	获取价格
1N5362B/TR8	MICROSEMI	Zener Diode, 28V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN	获取价格
1N5362B-13	DIODES	Zener Diode, 28V V(Z), 5%, 5W, Silicon, Unidirectional	获取价格
1N5362B-A	DIODES	Zener Diode, 28V V(Z), 5%, 5W, Silicon, Unidirectional	获取价格
1N5362BE	MCC	5 Watt Zener Diode 11 to 200 Volts	获取价格
1N5362BE3	MICROSEMI	Zener Diode, 28V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P	获取价格

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