16TTS16S

更新时间： 2024-01-15 15:33:49

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威世 - VISHAY		可控硅
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数据手册

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16TTS16S 数据手册

VS-16TTS16SPbF High Voltage Series

Surface Mountable

Phase Control SCR, 16 A

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

VALUES

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

TYP. MAX.

Maximum average on-state current

Maximum RMS on-state current

I_T(AV)

I_RMS

T_C= 93 °C, 180° conduction, half sine wave

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

10 A, T_J= 25 °C

170

200

144

200

2000

1.4

Maximum peak, one-cycle,

non-repetitive surge current

I_TSM

Maximum I²t for fusing

I²t

A²s

Maximum I²t for fusing

Maximum on-state voltage drop

On-state slope resistance

Threshold voltage

I²t

V_TM

r_t

A²s

24.0

1.1

m

T_J= 125 °C

V_T(TO)

T_J= 25 °C

0.5

Maximum reverse and direct leakage current

I_RM/I_DM

V_R= Rated V_RRM/V_DRM

T_J= 125 °C

Holding current

I_H

I_L

Anode supply = 6 V, resistive load, initial I_T= 1 A

Anode supply = 6 V, resistive load

100

150

Maximum latching current

200

500

150

Maximum rate of rise of off-state voltage

Maximum rate of rise of turned-on current

dV/dt

dI/dt

V/μs

A/μs

TRIGGERING

PARAMETER

SYMBOL

P_GM

TEST CONDITIONS

VALUES

8.0

UNITS

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

P_G(AV)

+ I_GM

2.0

1.5

- V_GM

Anode supply = 6 V, resistive load, T_J= - 10 °C

Anode supply = 6 V, resistive load, T_J= 25 °C

Anode supply = 6 V, resistive load, T_J= 125 °C

Anode supply = 6 V, resistive load, T_J= - 10 °C

Anode supply = 6 V, resistive load, T_J= 25 °C

Anode supply = 6 V, resistive load, T_J= 125 °C

Maximum required DC gate current to trigger

I_GT

3.0

Maximum required DC gate

voltage to trigger

V_GT

2.0

1.0

Maximum DC gate voltage not to trigger

Maximum DC gate current not to trigger

V_GD

I_GD

0.25

2.0

T_J= 125 °C, V_DRM= Rated value

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical turn-on time

Typical reverse recovery time

Typical turn-off time

t_gt

t_rr

t_q

T_J= 25 °C

0.9

μs

T_J= 125 °C

110

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 94590

Revision: 16-Jul-10

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