Datasheet > 16T06A-B

16T06A-B

更新时间： 2022-09-11 08:26:13

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅三端双向交流开关
页数	文件大小	规格书
7页	2598K
描述
TRIACs, 16A Snubberless, Logic Level and Standard

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数据手册

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16T06A-B 数据手册

RoHS

16T Series

SEMICONDUCTOR

Fig.1 Maximum power dissipation versus

on-state rms current (full cycle)

Fig.2 On-state rms current versus case

temperature (full cycle)

(A)

T(RMS)

P(W)

TO-263AB

TO-220AB

insulated

IT(RMS)(A)

T_C(°C)

100

125

Fig.3 On-state current versus ambient

temperature (full cycle)

Fig.4 Relative variation of thermal impedance

versus pulse duration

K=[Z /R

]

th th

I_T(RMS)(A)

4.0

3.5

1E+0

printed circuit board Fr4, copper thickness:35 µm

D²PAK

(S=1cm²)

Zth(j-c)

3.0

2.5

Zth(j-a)

1E-1

2.0

1.5

1.0

0.5

0.0

Tc(°c)

tp(s)

1E+0

1E-2

100

125

1E-3

1E-2

1E-1

1E+1

1E+2

5E+2

Fig.6 surge peak on- state current versus

number of cycles

Fig.5 On-state characteristics (maximum values)

(A)

I_TSM(A)

180

160

140

120

100

200

100

Tj max.

Vto=0.85V

Rd=25mΩ

t=20ms

One cycle

Non repetitive

Tjinitial=25°C

Tj=Tjmax.

Tj=25°c

Repetitive

Tc=85°C

VTM (V)

Number of cycles

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1000

100

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