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16RIA40S90 PDF预览

16RIA40S90

更新时间: 2024-01-27 08:32:09
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 152K
描述
Medium Power Thyristors (Stud Version), 16 A

16RIA40S90 数据手册

 浏览型号16RIA40S90的Datasheet PDF文件第1页浏览型号16RIA40S90的Datasheet PDF文件第2页浏览型号16RIA40S90的Datasheet PDF文件第4页浏览型号16RIA40S90的Datasheet PDF文件第5页浏览型号16RIA40S90的Datasheet PDF文件第6页浏览型号16RIA40S90的Datasheet PDF文件第7页 
16RIA Series  
Medium Power Thyristors  
(Stud Version), 16 A  
Vishay High Power Products  
SWITCHING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
200  
UNITS  
VDRM 600 V  
VDRM 800 V  
VDRM 1000 V  
VDRM 1600 V  
TJ = TJ maximum, VDM = Rated VDRM  
Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum  
TM = (2 x rated dI/dt) A  
180  
Maximum rate of rise  
of turned-on current  
dI/dt  
A/µs  
160  
I
150  
TJ = 25 °C,  
at rated VDRM/VRRM, TJ = 125 °C  
Typical turn-on time  
tgt  
trr  
0.9  
4
TJ = TJ maximum,  
ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs  
Typical reverse recovery time  
Typical turn-off time  
µs  
TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,  
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM  
gate bias 0 V to 100 W  
tq  
,
110  
Note  
• tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request  
BLOCKING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
100  
UNITS  
TJ = TJ maximum linear to 100 % rated VDRM  
TJ = TJ maximum linear to 67 % rated VDRM  
Maximum critical rate of rise  
of off-state voltage  
dV/dt  
V/µs  
300 (1)  
Note  
(1)  
Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 16RIA120S90  
TRIGGERING  
PARAMETER  
SYMBOL  
PGM  
TEST CONDITIONS  
VALUES  
8.0  
UNITS  
Maximum peak gate power  
Maximum average gate power  
Maximum peak positive gate current  
Maximum peak negative gate voltage  
TJ = TJ maximum  
W
PG(AV)  
IGM  
2.0  
TJ = TJ maximum  
TJ = TJ maximum  
TJ = - 65 °C  
1.5  
A
V
-VGM  
10  
Maximum required gate trigger  
current/voltage are the lowest  
value which will trigger all units  
6 V anode to cathode applied  
90  
DC gate current required to trigger  
IGT  
TJ = 25 °C  
60  
mA  
TJ = 125 °C  
TJ = - 65 °C  
TJ = 25 °C  
TJ = 125 °C  
35  
3.0  
2.0  
1.0  
2.0  
DC gate voltage required to trigger  
DC gate current not to trigger  
VGT  
V
IGD  
TJ = TJ maximum, VDRM = Rated value  
Maximum gate current/voltage  
mA  
not to trigger is the maximum  
value which will not trigger any  
unit with rated VDRM anode to  
cathode applied  
TJ = TJ maximum,  
DRM = Rated value  
DC gate voltage not to trigger  
VGD  
0.2  
V
V
Document Number: 93695  
Revision: 19-Sep-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3

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