1617AB5
5 Watts PEP, 26 Volts, Class AB
Linear 1600 - 1700 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1617AB5 is a COMMON EMITTER transistor capable of providing 5
Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz.
This transistor is specifically designed for SATCOM BASE STATION
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.
55CW
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
20 Watts
Maximum Voltage and Current
BVces
LVceo
Collector to Emitter Voltage
Collector to Emitter Voltage
55 Volts
27 Volts
3.5 Volts
2.0 Amps
BVebo Emitter to Base Voltage
Ic Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
5
9.0
Watt
dB
dBc
Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance
F =1660 MHz
Icq = 20 mAmpsVcc= 26V
5 W PEP, Two Tone
P-1dB
Pg
IMD3
VSWR
11
-32
6:1
Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Ic = 15 mA
Ic = 15 mA
Ie = 10 mA
Vce = 26 Volts
Vce = 5 V, Ic =0.1 A
F =1 MHz, Vcb = 28 V
Tc = 25oC
55
27
3.5
Volts
Volts
Volts
mA
BVces
BVceo
BVebo
Ices
hFE
Cob
5
100
20
Output Capacitance
Thermal Resistance
6
pF
6.0
oC/W
θjc
Issue A, February 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120