Datasheet > 150FDR04

150FDR04

更新时间： 2024-01-25 21:37:32

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
6页	1432K
描述
Fast Recovery Diodes

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中文翻译

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数据手册

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150FDR04 数据手册

RoHS

150FD(R)Series

SEMICONDUCTOR

Nell High Power Products

Fig.4 Forward power loss characteristics

300

250

200

180°

120°

90°

RMS Limit

60°

30°

200

Conduction Period

100

= 175°C

150 200 250 300

100

120

140

160

180

100

Average Forward Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig.5 Maximum non-repetitive surge current

Fig.6 Maximum non-repetitive surge current

4000

3500

Maximum non repetitive surge current

versus pulse train duration.

Control of conduction may not be maintained.

At any rated load condition and with

rated vrrm applied following surge.

3500

3000

2500

2000

1500

1000

500

lnitial T_J=175°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

3000

2500

2000

1500

1000

500

lnitial T = 175°C

no voltage reapplied @ 50 Hz

rated V

reapplied @ 50 Hz

rrm

Per Junction

100

0.01

0.1

Pulse train duration (S)

Number of equal amplitude half cycle

current pulses(N)

Fig.7 Forward voltage drop characteristics

Fig.8 Thermal lmpedance R_thJCcharacteristic

10000

0.1

Steady State Value

RthJC = 0.3 K/W

(DC Operation)

1000

100

T_J= 25°C

0.01

T_J= 175°C

0.001

0.01

0.1

Square wave pulse duration (S)

0.5

1.5

2.5

Instantaneous forward voltage (V)

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