Datasheet > 130MT100KBPBF

130MT100KBPBF

更新时间： 2024-02-15 01:19:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	94K
描述
Bridge Rectifier Diode, 3 Phase, 130A, 1000V V(RRM), Silicon, INT-A-PAK-6

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130MT100KBPBF 数据手册

130-160MT..KB Series

Bulletin I27502 rev. A 05/03

500

450

400

350

300

250

200

150

100

130MT..KB Series

= 150°C

120°

(Rect)

20 40 60 80 100 120 140 1060

Total Output Current (A)

100

125

150

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Total Power Loss Characteristics

1000

900

800

700

600

500

400

300

200

1200

1100

1000

900

800

700

600

500

400

300

200

At Any Rated Load Condition And With

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Rated V

Applied Following Surge.

RRM

Initial T = 150°C

No Voltage Reapplied

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Rated V

Reapplied

RRM

130MT..KB Series

100

0.01

0.1

Pulse Train Duration (s)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 4 - Maximum Non-Repetitive Surge Current

Fig. 5 - Maximum Non-Repetitive Surge Current

150

1000

160MT..KB Series

140

130

120

110

100

120°

(Rect)

T = 25°C

T = 150°C

160MT..KB Series

Per Junction

Total Output Current (A)

Fig. 6 - Current Ratings Characteristics

120

160

200

240

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

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1 2 3 456 7

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