Datasheet > 12N80G-T47-T

12N80G-T47-T

更新时间： 2022-02-26 10:02:09

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友顺 - UTC		/
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描述
N-CHANNEL POWER MOSFET

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12N80G-T47-T 数据手册

12N80

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_D=250µA, V_GS=0V

800

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JI_D=250µA, Referenced to 25°C

1.0

V/°C

_DS=800V, V_GS=0V

V_DS=640V, T_C=125°C

_GS=+30V, V_DS=0V

Drain-Source Leakage Current

Gate- Source Leakage Current

I_DSS

I_GSS

µA

100

Forward

Reverse

100 nA

-100 nA

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=6A

3.0

5.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.75 1.0

Ω

C_ISS

C_OSS

C_RSS

4200

315

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

123 155 nC

V_GS=10V, V_DS=640V, I_D=12A

(Note 1, 2)

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

45 nC

80 nC

100 120 ns

198 220 ns

340 360 ns

180 200 ns

V_DD=400V, I_D=12A, R_G=25Ω

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

I_S=12A, V_GS=0V

1.4

1000

17.0

µC

V_GS=0V, I_S=12A, dI_F/dt=100A/µs

(Note 1)

Q_RR

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-594.G

www.unisonic.com.tw

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