Datasheet > 1210YD226MAT4A

1210YD226MAT4A

更新时间： 2024-01-14 02:08:37

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		电容器
页数	文件大小	规格书
4页	569K
描述
Capacitor, Ceramic, Chip, General Purpose, 22uF, 16V, ±20%, X5R, 1210 (3225 mm), Sn/NiBar, -55º ~ +85ºC, 13" Reel

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1210YD226MAT4A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	1210
包装说明：	CHIP	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8532.24.00.20
风险等级：	5.32	电容：	22 µF
电容器类型：	CERAMIC CAPACITOR	介电材料：	CERAMIC
高度：	2.79 mm	JESD-609代码：	e3
长度：	3.2 mm	安装特点：	SURFACE MOUNT
多层：	Yes	负容差：	20%
端子数量：	2	最高工作温度：	85 °C
最低工作温度：	-55 °C	封装形式：	SMT
包装方法：	TR, Embossed, 13 Inch	极性：	NON-POLARIZED
正容差：	20%	额定（直流）电压（URdc）：	16 V
尺寸代码：	1210	表面贴装：	YES
温度特性代码：	X5R	温度系数：	15% ppm/ °C
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子形状：	WRAPAROUND
宽度：	2.5 mm	Base Number Matches：	1

1210YD226MAT4A 数据手册

X5R Dielectric

Speciﬁcations and Test Methods

Parameter/Test

Operating Temperature Range

Capacitance

X5R Speciﬁcation Limits

Measuring Conditions

-55ºC to +85ºC

Temperature Cycle Chamber

Within speciﬁed tolerance

≤ 2.5% for ≥ 50V DC rating

Freq.: 1.0 kHz ± 10%

Voltage: 1.0Vrms ± .2V

For Cap > 10 µF, 0.5Vrms @ 120Hz

≤ 12.5% for 25V, 35V DC rating

≤ 12.5% Max. for 16V DC rating and lower

Contact Factory for DF by PN

Dissipation Factor

10,000MΩ or 500MΩ - µF,

Charge device with rated voltage for

120 ± 5 secs @ room temp/humidity

Insulation Resistance

Dielectric Strength

whichever is less

Charge device with 250% of rated voltage for

1-5 seconds, w/charge and discharge current

limited to 50 mA (max)

No breakdown or visual defects

Appearance

Capacitance

Variation

No defects

Deﬂection: 2mm

Test Time: 30 seconds

≤ ±12%

Resistance to

Flexure

Stresses

Dissipation

Factor

Meets Initial Values (As Above)

Insulation

Resistance

≥ Initial Value x 0.3

≥ 95% of each terminal should be covered

Dip device in eutectic solder at 230 ± 5ºC

for 5.0 ± 0.5 seconds

Solderability

with fresh solder

Appearance

No defects, <25% leaching of either end terminal

Capacitance

Variation

≤ ±7.5%

Dip device in eutectic solder at 260ºC for 60sec-

onds. Store at room temperature for 24 ± 2hours

before measuring electrical properties.

Dissipation

Factor

Resistance to

Solder Heat

Meets Initial Values (As Above)

Insulation

Resistance

Dielectric

Strength

Appearance

No visual defects

Step 1: -55ºC ± 2º

30 ± 3 minutes

Capacitance

Variation

≤ ±7.5%

Step 2: Room Temp

≤ 3 minutes

Dissipation

Factor

Thermal

Shock

Meets Initial Values (As Above)

Step 3: +85ºC ± 2º

Step 4: Room Temp

30 ± 3 minutes

Insulation

Resistance

≤ 3 minutes

Dielectric

Strength

Repeat for 5 cycles and measure after

24 ± 2 hours at room temperature

Appearance

No visual defects

Charge device with 1.5X rated voltage in

test chamber set at 85ºC ± 2ºC for 1000 hours

(+48, -0).

Capacitance

Variation

≤ ±12.5%

Dissipation

Factor

Note: Contact factory for *optional

speciﬁcation part numbers that are tested at

< 1.5X rated voltage.

≤ Initial Value x 2.0 (See Above)

≥ Initial Value x 0.3 (See Above)

Load Life

Insulation

Resistance

Remove from test chamber and stabilize at room

temperature for 24 ± 2 hours

Dielectric

Strength

Meets Initial Values (As Above)

Appearance

No visual defects

Store in a test chamber set at 85ºC ± 2ºC/

85% ± 5% relative humidity for 1000 hours

(+48, -0) with rated voltage applied.

Capacitance

Variation

≤ ±12.5%

Load

Humidity

Dissipation

Factor

≤ Initial Value x 2.0 (See Above)

≥ Initial Value x 0.3 (See Above)

Meets Initial Values (As Above)

Remove from chamber and stabilize at room

Insulation

Resistance

temperature and humidity for

24 ± 2 hours before measuring.

Dielectric

Strength

2277

042418

123 4

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