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12065A104JAT2A PDF预览

12065A104JAT2A

更新时间: 2022-02-26 11:30:44
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 468K
描述
Indium Gallium Phosphorus HBT

12065A104JAT2A 数据手册

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Table 6. Functional Pin Description  
Name  
Pin  
Description  
Number  
V
NC V  
B2  
CC1  
V
1
Base power supply for first stage amplifier.  
B1  
10  
12 11  
RF  
2, 3  
RF input for the power amplifier. This pin is DC--shorted to  
GND and AC--coupled to the transistor base of the first  
stage.  
IN  
1
2
3
9
8
7
V
RF  
RF  
V
B1  
OUT  
OUT  
RF  
IN  
V
4
5
Detector bias voltage supply.  
BIAS  
RF  
IN  
CC2  
V
Detector output voltage reference. V -- V  
is useful for  
REF  
REF  
out  
6
4
5
tracking detector performance over temperature.  
V
V
V
BIAS REF OUT  
V
6
7
Detector output voltage.  
OUT  
V
Collector power supply for second stage amplifier.  
CC2  
(Top View)  
RF  
8, 9  
RF output for the power amplifier. This pin is DC--coupled  
and requires a DC--blocking series capacitor.  
OUT  
Figure 1. Pin Connections  
V
10  
11  
12  
Base power supply for second stage amplifier.  
Not connected.  
B2  
NC  
V
Collector power supply for first stage amplifier.  
CC1  
GND  
Backside  
Center  
Metal  
The center metal base of the QFN 3x3 package provides  
both DC and RF ground as well as heat sink contact for the  
power amplifier.  
MMG2401NR2  
RF Device Data  
Freescale Semiconductor  
3

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