Datasheet > 12065A104JAT2A

12065A104JAT2A

更新时间： 2022-02-26 11:30:44

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	468K
描述
Indium Gallium Phosphorus HBT

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数据手册

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12065A104JAT2A 数据手册

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted.) V = 3.3 Vdc, V

= 3 Vdc, I = 83 mA, f = 2450 MHz

BIAS

Characteristic

Output Power at 1dB Compression

Power Gain

Symbol

Min

Typ

26.5

27.5

Max

—

Unit

dBm

P1dB

(P = 19 dBm)

out

Error Vector Magnitude

(P = 19 dBm, 64 QAM/54 Mbps)

out

EVM

—

Total Current

210

Ctotal

(P = 19 dBm)

out

Quiescent Current

—

156

8.4

—

DCQ

Bias Control Reference Current

ref

(I = 66 mA)

Gain Flatness

(Over 100 MHz)

—

±0.2

±1

—

Gain Variation over Temperature

—

(--40 to 85°C)

Input Return Loss

Reverse Isolation

Second Harmonic

IRL

—

-- 1 0

-- 3 5

-- 4 5

-- 7 . 5

—

dBc

(P = 19 dBm)

out

Third Harmonic

(P = 19 dBm)

out

—

-- 3 5

100

—

dBc

Ramp--On Time (10--90%)

MMG2401NR2

RF Device Data

Freescale Semiconductor

123 4 5 6 7...12

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