Datasheet > 12065A104JAT2A

12065A104JAT2A

更新时间： 2022-02-26 11:30:44

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	468K
描述
Indium Gallium Phosphorus HBT

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数据手册

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12065A104JAT2A 数据手册

Document Number: MMG2401

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

Indium Gallium Phosphorus HBT

WLAN Power Amplifier

Designed for 802.11g and dual mode applications with frequencies from

2400 to 2500 MHz.

MMG2401NR2

•

26.5 dBm P1dB @ 2450 MHz

•

Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)

High Gain, High Efficiency and High Linearity

EVM = 3% Typ @ P_out= +19 dBM, 14% PAE

RoHS Compliant

2400--2500 MHz, 27.5 dB, 26.5 dBm

802.11g WLAN POWER AMPLIFIER

InGaP HBT

In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.

CASE 1483--01

QFN 3x3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Collector Supply

Base Supply First Stage

Base Supply Second Stage

Detector Bias Supply

DC Current

BIAS

171

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

°C/W

°C

(1)

185

Case Operating Temperature Range

Storage Temperature Range

-- 4 0 t o + 8 5

stg

-- 55 to +150

°C

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

2 (Minimum)

A (Minimum)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020

1. Simulated.

260

°C

MMG2401NR2

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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