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12065A103JAT4A PDF预览

12065A103JAT4A

更新时间： 2024-02-28 06:26:26
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX 电容器
页数 文件大小 规格书
4页 357K
描述
NP0 MLCC

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12065A103JAT4A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：CHIP, ROHS COMPLIANT
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8532.24.00.20风险等级：5.61
电容：0.01 µF电容器类型：CERAMIC CAPACITOR
介电材料：CERAMIC高度：1.52 mm
JESD-609代码：e3长度：3.2 mm
安装特点：SURFACE MOUNT多层：Yes
负容差：5%端子数量：2
最高工作温度：125 °C最低工作温度：-55 °C
封装形状：RECTANGULAR PACKAGE封装形式：SMT
包装方法：TR, EMBOSSED/PAPER, 13 INCH正容差：5%
额定（直流）电压（URdc）：50 V尺寸代码：1206
表面贴装：YES温度特性代码：C0G
温度系数：-/+30ppm/Cel ppm/ °C端子面层：Tin (Sn) - with Nickel (Ni) barrier
端子形状：WRAPAROUND宽度：1.6 mm

12065A103JAT4A 数据手册

 浏览型号12065A103JAT4A的Datasheet PDF文件第1页浏览型号12065A103JAT4A的Datasheet PDF文件第3页浏览型号12065A103JAT4A的Datasheet PDF文件第4页 
C0G (NP0) Dielectric  
Specifications and Test Methods  
Parameter/Test  
Operating Temperature Range  
Capacitance  
NP0 Specification Limits  
-55ºC to +125ºC  
Measuring Conditions  
Temperature Cycle Chamber  
Within specified tolerance  
Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF  
1.0 kHz ± 10% for cap > 1000 pF  
Voltage: 1.0Vrms ± .2V  
<30 pF: Q≥ 400+20 x Cap Value  
≥30 pF: Q≥ 1000  
Q
Charge device with rated voltage for  
60 ± 5 secs @ room temp/humidity  
100,000MΩ or 1000MΩ - µF,  
whichever is less  
Insulation Resistance  
Charge device with 250% of rated voltage for  
1-5 seconds, w/charge and discharge current  
limited to 50 mA (max)  
Dielectric Strength  
No breakdown or visual defects  
Note: Charge device with 150% of rated  
voltage for 500V devices.  
Deflection: 2mm  
Appearance  
No defects  
Test Time: 30 seconds  
Capacitance  
Variation  
±5% or ±.5 pF, whichever is greater  
Resistance to  
Flexure  
Q
Meets Initial Values (As Above)  
≥ Initial Value x 0.3  
Stresses  
Insulation  
Resistance  
Dip device in eutectic solder at 230 ± 5ºC  
for 5.0 ± 0.5 seconds  
≥ 95% of each terminal should be covered  
with fresh solder  
Solderability  
Appearance  
No defects, <25% leaching of either end terminal  
≤ ±2.5% or ±.25 pF, whichever is greater  
Capacitance  
Variation  
Dip device in eutectic solder at 260ºC for 60sec-  
onds. Store at room temperature for 24 ± 2hours  
before measuring electrical properties.  
Resistance to  
Q
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Solder Heat  
Insulation  
Resistance  
Dielectric  
Strength  
Meets Initial Values (As Above)  
Appearance  
No visual defects  
Step 1: -55ºC ± 2º  
30 ± 3 minutes  
Capacitance  
Variation  
≤ ±2.5% or ±.25 pF, whichever is greater  
Step 2: Room Temp  
≤ 3 minutes  
Thermal  
Shock  
Q
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Step 3: +125ºC ± 2º  
Step 4: Room Temp  
30 ± 3 minutes  
Insulation  
≤ 3 minutes  
Resistance  
Dielectric  
Strength  
Repeat for 5 cycles and measure after  
Meets Initial Values (As Above)  
24 hours at room temperature  
Appearance  
No visual defects  
Capacitance  
Variation  
≤ ±3.0% or ± .3 pF, whichever is greater  
Charge device with twice rated voltage in  
test chamber set at 125ºC ± 2ºC  
for 1000 hours (+48, -0).  
≥ 30 pF:  
Q≥ 350  
Q
Load Life  
≥10 pF, <30 pF:  
<10 pF:  
Q≥ 275 +5C/2  
Q≥ 200 +10C  
(C=Nominal Cap)  
Remove from test chamber and stabilize at  
room temperature for 24 hours  
before measuring.  
Insulation  
≥ Initial Value x 0.3 (See Above)  
Meets Initial Values (As Above)  
Resistance  
Dielectric  
Strength  
Appearance  
No visual defects  
Capacitance  
Variation  
≤ ±5.0% or ± .5 pF, whichever is greater  
Store in a test chamber set at 85ºC ± 2ºC/  
85% ± 5% relative humidity for 1000 hours  
(+48, -0) with rated voltage applied.  
≥ 30 pF:  
≥10 pF, <30 pF:  
<10 pF:  
Q≥ 350  
Load  
Q
Q≥ 275 +5C/2  
Q≥ 200 +10C  
Humidity  
Remove from chamber and stabilize at room  
Insulation  
≥ Initial Value x 0.3 (See Above)  
temperature for 24 ± 2 hours before measuring.  
Resistance  
Dielectric  
Strength  
Meets Initial Values (As Above)  
051818  
5  
1234

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