Datasheet > 11N80L-TC3-T

11N80L-TC3-T

更新时间： 2022-02-26 10:57:44

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友顺 - UTC		/
页数	文件大小	规格书
4页	165K
描述
11A, 812V N-CHANNEL POWER MOSFET

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11N80L-TC3-T 数据手册

11N80

Preliminary

Power MOSFET



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

I_D=250µA, V_GS=0V

800

△BV_DSS/△T_JReference to 25°C, I_D=250µA

1.0

V/°C

Drain-Source Leakage Current

I_DSS

I_GSS

V_DS=800V, V_GS=0V

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=5.5A

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.9

Ω

C_ISS

C_OSS

C_RSS

2530 3290 pF

215 280 pF

Output Capacitance

_DS=25V, V_GS=0V, f=1.0MHz

_GS=10V, V_DD=640V, I_D=11A,

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

80 nC

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

R_G=25Ω

60 130 ns

130 270 ns

85 180 ns

V_DD=400V, I_D=11A, R_G=25Ω,

V_GS=10V

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_RR

I_S=11.0A, V_GS=0V

1.4

1000

170

µC

V_GS=0V, I_S=11A, d_IF/dt=100A/µS

Q_RR

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R502-893.b

www.unisonic.com.tw

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