Datasheet > 11N80L-TC3-T

11N80L-TC3-T

更新时间： 2022-02-26 10:57:44

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	165K
描述
11A, 812V N-CHANNEL POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

11N80L-TC3-T 数据手册

11N80

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

800

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

Pulsed

Drain Current

I_DM

Avalanche Current

I_AR

Single Pulsed

Repetitive

E_AS

960

V/ns

Avalanche Energy

E_AR

Peak Diode Recovery dv/dt

Power Dissipation (T_C=25°C)

dv/dt

4.0

TO-3P

297

P_D

TO-230

156

Junction Temperature

T_J

-55~+150

°C

Storage Temperature Range

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. L=15mH, I_AS=11.7A, V_DD=50V, R_G=25Ω starting T_C=25°C.



THERMAL CHARACTERISTICS

PARAMETER

TO-3P

SYMBOL

RATINGS

UNIT

°C/W

Junction to Ambient

θ_JA

TO-230

TO-3P

62.5

0.42

Junction to Case

θ_JC

°C/W

TO-230

0.80

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R502-893.b

www.unisonic.com.tw

123 4

下载PDF

与11N80L-TC3-T相关器件

型号	品牌	描述	获取价格	数据表
11N90	UTC	11 Amps, 900 Volts N-CHANNEL POWER MOSFET	获取价格
11N90_15	UTC	N-CHANNEL POWER MOSFET	获取价格
11N90G-T3N-T	UTC	N-CHANNEL POWER MOSFET	获取价格
11N90G-T3P-T	UTC	N-CHANNEL POWER MOSFET	获取价格
11N90G-TA3-T	UTC	11 Amps, 900 Volts N-CHANNEL POWER MOSFET	获取价格
11N90G-TF1-T	UTC	11 Amps, 900 Volts N-CHANNEL POWER MOSFET	获取价格