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11AA160T-ESN PDF预览

11AA160T-ESN

更新时间: 2024-02-19 20:42:57
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
44页 801K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11AA160T-ESN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:TSSOP, TO-236针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:15 weeks
风险等级:1.23最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
长度:2.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:3字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TO-236
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.12 mm串行总线类型:1-WIRE
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1.3 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

11AA160T-ESN 数据手册

 浏览型号11AA160T-ESN的Datasheet PDF文件第3页浏览型号11AA160T-ESN的Datasheet PDF文件第4页浏览型号11AA160T-ESN的Datasheet PDF文件第5页浏览型号11AA160T-ESN的Datasheet PDF文件第7页浏览型号11AA160T-ESN的Datasheet PDF文件第8页浏览型号11AA160T-ESN的Datasheet PDF文件第9页 
11AAXXX/11LCXXX  
2.0  
2.1  
FUNCTIONAL DESCRIPTION  
Principles of Operation  
The 11XX family of serial EEPROMs support the  
UNI/O® protocol. They can be interfaced with  
microcontrollers, including Microchip’s PIC® microcon-  
trollers, ASICs, or any other device with an available  
discrete I/O line that can be configured properly to  
match the UNI/O protocol.  
The 11XX devices contain an 8-bit instruction register.  
The devices are accessed via the SCIO pin.  
Table 4-1 contains a list of the possible instruction  
bytes and format for device operation. All instructions,  
addresses, and data are transferred MSb first, LSb  
last.  
Data is embedded into the I/O stream through  
Manchester encoding. The bus is controlled by a  
master device which determines the clock period, con-  
trols the bus access and initiates all operations, while  
the 11XX works as slave. Both master and slave can  
operate as transmitter or receiver, but the master  
device determines which mode is active.  
FIGURE 2-1:  
BLOCK DIAGRAM  
STATUS  
Register  
HV Generator  
EEPROM  
Array  
Memory  
Control  
Logic  
X
I/O Control  
Logic  
Dec  
Page Latches  
Y Decoder  
Current-  
Limited  
Slope  
Control  
SCIO  
Sense Amp.  
R/W Control  
Vcc  
Vss  
DS22067H-page 6  
Preliminary  
2010 Microchip Technology Inc.  

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