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11AA02E48-I/TT PDF预览

11AA02E48-I/TT

更新时间: 2024-02-14 05:50:24
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
18页 259K
描述
2K UNI/O® Serial EEPROM with EUI-48™ Node Identity

11AA02E48-I/TT 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
Factory Lead Time:15 weeks风险等级:1.49
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/158347.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=158347
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=1583473D View:https://componentsearchengine.com/viewer/3D.php?partID=158347
Samacsys PartID:158347Samacsys Image:https://componentsearchengine.com/Images/9/11AA02E48T-I/TT.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/11AA02E48T-I/TT.jpgSamacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:(TT)(SOT-23)Samacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
长度:2.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:3字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TO-236
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.12 mm串行总线类型:1-WIRE
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1.3 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

11AA02E48-I/TT 数据手册

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11AA02E48  
The 6-byte EUI-48™ node address value is stored in  
array locations 0xFA through 0xFF, as shown in  
Figure 3-2. The first 3 bytes are the Organizationally  
Unique Identifier (OUI) assigned to Microchip by the  
IEEE Registration Authority. The remaining 3 bytes are  
the Extension Identifier, and are generated by Micro-  
chip to ensure a globally-unique, 48-bit value.  
3.0  
PRE-PROGRAMMED EUI-48™  
NODE ADDRESS  
The 11AA02E48 is programmed at the factory with a  
globally unique, EUI-48™ and EUI-64™ compatible  
node address stored in the upper 1/4 of the array and  
write-protected through the STATUS register. The  
remaining 1,536 bits are available for application use.  
3.1  
EUI-64™ Support  
FIGURE 3-1:  
MEMORY ORGANIZATION  
The pre-programmed EUI-48 node address can easily  
be encapsulated at the application level to form a glob-  
ally unique, 64-bit node address for systems utilizing  
the EUI-64 standard. This is done by adding 0xFFFE  
between the OUI and the Extension Identifier, as  
shown below.  
00h  
Standard  
EEPROM  
C0h  
Write-Protected  
EUI-48™ Block  
FFh  
FIGURE 3-2:  
EUI-48 NODE ADDRESS PHYSICAL MEMORY MAP EXAMPLE  
24-bit Organizationally  
Unique Identifier  
24-bit Extension  
Identifier  
Description  
00h  
04h  
A3h  
12h  
34h  
56h  
FFh  
Data  
Array  
Address  
FAh  
Corresponding EUI-48™ Node Address: 00-04-A3-12-34-56  
Corresponding EUI-64™ Node Address: 00-04-A3-FF-FE-12-34-56  
3.2  
Factory-Programmed Write  
Protection  
In order to help guard against accidental corruption of  
the EUI-48 node address, the BP1 and BP0 bits of the  
STATUS register are programmed at the factory to ‘0’  
and ‘1’, respectively, as shown in the following table:  
7
6
5
4
3
BP1  
0
2
BP0  
1
1
0
X
X
X
X
WEL  
WIP  
This protects the upper 1/4 of the array (0xC0 to 0xFF)  
from write operations. This array block can be utilized  
for writing by clearing the BP bits with a Write Status  
Register (WRSR) instruction. Note that if this is per-  
formed, care must be taken to prevent overwriting the  
EUI-48 value.  
DS22122A-page 6  
Preliminary  
© 2008 Microchip Technology Inc.  

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