53-93-113MT..KB Series
Bulletin I27503 08/97
Blocking
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
VINS RMS isolation voltage
4000
V
TJ = 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise
of off-state voltage (*)
500
V/µs TJ = TJ max., linear to 0.67 VDRM
gate open circuit
,
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
PGM Max. peak gate power
10
W
TJ = TJ max.
PG(AV) Max. average gate power
2.5
IGM
Max. peak gate current
2.5
10
A
V
-VGT Max. peak negative
gate voltage
VGT Max. required DC gate
voltage to trigger
4.0
2.5
V
TJ=-40°C
TJ= 25°C Anodesupply=6V,resistiveload
1.7
TJ= 125°C
TJ=-40°C
IGT
Max. required DC gate
current to trigger
270
150
80
mA TJ= 25°C Anodesupply=6V,resistiveload
TJ =125°C
VGD Max. gate voltage
that will not trigger
0.25
V
@ TJ = TJ max., ratedVDRMapplied
IGD
Max. gate current
that will not trigger
6
mA
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
TJ
Max. junction operating
temperature range
-40 to 125
°C
Tstg
Max. storage temperature
range
-40 to 125
°C
RthJC Max. thermal resistance,
junction to case
0.18
1.07
0.19
1.17
0.14
0.86
0.15
0.91
0.03
0.12
0.70
0.12
0.74
K/W DC operation per module
DC operation per junction
120° Rect condunction angle per module
120° Rect condunction angle per junction
RthCS Max. thermal resistance,
case to heatsink
K/W Per module
Mounting surface smooth, flat an greased
A mounting compound is recommended and the
Nm
T
Mounting
to heatsink
to terminal
4 to 6
3 to 4
225
torque should be rechecked after a period of 3
hoursto allow for the spread of the compound.
torque ± 10%
Lubricatedthreads.
g
wt
Approximate weight
3
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