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113MT80KBPBF PDF预览

113MT80KBPBF

更新时间: 2024-02-26 16:18:26
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极局域网
页数 文件大小 规格书
9页 115K
描述
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113MT80KBPBF 数据手册

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53-93-113MT..KB Series  
Bulletin I27503 08/97  
R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sinusoidal conduction @ TJ max.  
Rectangular conduction @ TJ max.  
Devices  
Units  
180o  
0.072  
0.033  
120o  
0.085  
0.039  
0.033  
90o  
60o  
30o  
180o  
0.055  
0.027  
0.023  
120o  
0.091  
0.044  
0.037  
90o  
60o  
30o  
53/52/51MT.KB  
93/92/91MT.KB  
0.108  
0.051  
0.042  
0.152  
0.069  
0.057  
0.233  
0.099  
0.081  
0.117  
0.055  
0.046  
0.157  
0.071  
0.059  
0.236 K/W  
0.100  
113/112/111MT.KB 0.027  
0.082  
Ordering Information Table  
Device Code  
11  
3
MT 160  
K
B
S90  
1
2
3
4
5
6
1
2
-
-
Current rating code: 5 = 55 A (Avg)  
= 90 A (Avg)  
11 = 110 A (Avg)  
Circuit configuration code: 3 = Full-controlled bridge  
9
2 = Positive half-controlled bridge  
1 = Negative half-controlled bridge  
3
4
5
6
-
-
-
-
Essential part number  
Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)  
Generation II  
Critical dv/dt: None = 500V/µs (Standard value)  
S90 = 1000V/µs (Special selection)  
full-controlled bridge  
(53, 93, 113MT..KB)  
negative half-controlled bridge  
(51, 91, 111MT..KB)  
positive half-controlled bridge  
(52, 92, 112MT..KB)  
NOTE: To order the Optional Hardware see Bulletin I27900  
4
www.irf.com  

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