112MT80KPBF

更新时间： 2024-01-02 06:15:28

品牌	Logo	应用领域
威世 - VISHAY		栅极触发装置可控硅整流器局域网
页数	文件大小	规格书
9页	188K
描述
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A

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技术参数
数据手册

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112MT80KPBF 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	Is Samacsys：	N
配置：	3 PHASE BRIDGE, HALF-CONTROLLED CONVERTER, COMMON CATHODE	最大直流栅极触发电流：	270 mA
最大直流栅极触发电压：	4 V	快速连接描述：	3G
螺丝端子的描述：	3AK-2CA-CK	最大维持电流：	200 mA
最大漏电流：	20 mA	通态非重复峰值电流：	1180 A
元件数量：	3	最大通态电压：	1.57 V
最大通态电流：	110000 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	重复峰值反向电压：	800 V
子类别：	Silicon Controlled Rectifiers	触发设备类型：	SCR
Base Number Matches：	1

112MT80KPBF 数据手册

5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

Vishay High Power Products

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

5.MT...K 9.MT...K 11.MT...K UNITS

RMS isolation voltage

V_ISOL

T_J= 25 °C all terminal shorted, f = 50 Hz, t = 1 s

4000

Maximum critical rate of rise of

off-state voltage

T_J= T_Jmaximum, linear to 0.67 V_DRM

gate open circuit

dV/dt ⁽¹⁾

500

V/μs

Note

(1)

Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90

TRIGGERING

PARAMETER

SYMBOL

P_GM

TEST CONDITIONS

5.MT...K 9.MT...K 11.MT...K UNITS

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

P_G(AV)

I_GM

2.5

T_J= T_Jmaximum

2.5

Maximum peak negative

gate voltage

- V_GT

T_J= - 40 °C

T_J= 25 °C

T_J= 125 °C

T_J= - 40 °C

T_J= 25 °C

T_J= 125 °C

4.0

2.5

1.7

270

150

Maximum required DC gate

voltage to trigger

V_GT

Anode supply = 6 V,

resistive load

Maximum required DC gate

current to trigger

I_GT

Maximum gate voltage

that will not trigger

V_GD

I_GD

0.25

T_J= T_Jmaximum, rated V_DRMapplied

Maximum gate current

that will not trigger

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

5.MT...K 9.MT...K 11.MT...K UNITS

Maximum junction operating

and storage temperature range

T_J, T_Stg

- 40 to 125

°C

DC operation per module

0.18

1.07

0.19

1.17

0.14

0.86

0.15

0.91

0.12

0.70

0.12

0.74

DC operation per junction

Maximum thermal resistance,

junction to case

R_thJC

120 °C rect. conduction angle per module

120 °C rect. conduction angle per junction

K/W

Maximum thermal resistance,

case to heatsink per module

R_thCS

Mounting surface smooth, flat and grased

0.03

A mounting compound is recommended and

the torque should be rechecked after a period of

3 hours to allow for the spread of the

compound. Lubricated threads.

to heatsink

to terminal

4 to 6

3 to 4

Mounting

torque 10 %

Approximate weight

225

Document Number: 94353

Revision: 13-Aug-08

For technical questions, contact: indmodules@vishay.com

www.vishay.com

1 234 5 6 7...9

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