111RIA120M

更新时间： 2024-02-08 09:03:50

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
8页	120K
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111RIA120M 数据手册

110/111RIA Series

Bulletin I25204 rev& B 09/03

10000

1000

100

Tj = 25˚C

Tj = 140˚C

110/111RIA Series

111RIA Series

Instantaneous On-State Voltage (V)

Fig& 7 - On-State Voltage Drop Characteristics

0.1

Steady State Value

RthJC = 0.27 K/W

(DC Operation)

0.01

0.001

111R SeriesSeries

110/1IA11RIA

0.0001

0.001

0.01

Square Wave Pulse Duration (s)

Fig& 8 - Thermal Impedance Z _thJCCharacteristic

0.1

100

Rectangular gate pulse

(1) PGM = 12W, tp = 5ms

a) Recommended load line for

rated di/dt: 20V, 30ohms;

tr<=0.5 µs, tp=>6µs

b) Recommended load line for

<=30% rated di/dt: 15V, 40ohms

tr<=1 µs, tp=>6µs

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 200W, tp = 300µs

(a)

(b)

(2)

(4)

(1)

(3)

VGD

Device:110/111RIASeries Frequency Limited by PG(AV)

Device: 111RIA Series

IGD

0.1

0.001

0.01

0.1

100

1000

Instantaneous Gate Current (A)

Fig& 9 - Gate Characteristics

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