10RIA40LPBF

更新时间： 2024-02-06 07:05:59

品牌	Logo	应用领域
威世 - VISHAY		栅极触发装置可控硅整流器
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8页	152K
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10RIA40LPBF 数据手册

10RIA Series

Medium Power Thyristors

(Stud Version), 10 A

Vishay High Power Products

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

200

UNITS

V_DRM≤ 600 V

V_DRM≤ 800 V

V_DRM≤ 1000 V

V_DRM≤ 1600 V

T_J= T_Jmaximum, V_DM= Rated V_DRM

Gate pulse = 20 V, 15 Ω, t_p= 6 µs, t_r= 0.1 µs maximum

I_TM= (2 x rated dI/dt) A

180

Maximum rate of rise

of turned-on current

dI/dt

A/µs

160

150

T_J= 25 °C,

at rated V_DRM/V_RRM, T_J= 125 °C

Typical turn-on time

t_gt

t_rr

0.9

T_J= T_Jmaximum,

Typical reverse recovery time

Typical turn-off time

_TM= I_T(AV), t_p> 200 µs, dI/dt = - 10 A/µs

µs

T_J= T_Jmaximum, I_TM= I_T(AV), t_p> 200 µs, V_R= 100 V,

dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V_DRM

gate bias 0 V to 100 W

t_q

110

Note

• t_q= 10 µs up to 600 V, t_q= 30 µs up to 1600 V available on special request

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

100

UNITS

T_J= T_Jmaximum linear to 100 % rated V_DRM

T_J= T_Jmaximum linear to 67 % rated V_DRM

Maximum critical rate of rise

of off-state voltage

dV/dt

V/µs

300 ⁽¹⁾

Note

(1)

Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 10RIA120S90

TRIGGERING

PARAMETER

SYMBOL

P_GM

TEST CONDITIONS

VALUES

8.0

UNITS

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

T_J= T_Jmaximum

P_G(AV)

I_GM

2.0

T_J= T_Jmaximum

T_J= - 65 °C

1.5

-V_GM

Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units

6 V anode to cathode applied

DC gate current required to trigger

I_GT

T_J= 25 °C

T_J= 125 °C

T_J= - 65 °C

T_J= 25 °C

T_J= 125 °C

3.0

2.0

1.0

2.0

DC gate voltage required to trigger

DC gate current not to trigger

V_GT

I_GD

T_J= T_Jmaximum, V_DRM= Rated value

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated V_DRManode to

cathode applied

T_J= T_Jmaximum,

_DRM= Rated value

DC gate voltage not to trigger

V_GD

0.2

Document Number: 93689

Revision: 06-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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