Datasheet > 10N30F

10N30F

更新时间： 2023-12-06 20:10:26

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	674K
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场效应晶体管

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10N30F 数据手册

10N30F

N-Channel Power MOSFET

FEATURES



High switching speed.

RDS(ON)=0.65Ω @ VGS=10V.

100% avalanche tested.

Very Good Manufacturing Reliabilty.

APPLICATIONS



N-Channel Power MOSFET.



Switching Applications.

ITO-220AB

MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

300

Gate -Source Voltage

V_GS

I_D

I_DM

P_D

±30

Drain Current Continuous at T_C=25℃

Drain Current(pulsed)Note1

Power Dissipation at T_C=25℃

115

360

13.5

Avalanche Energy(Single Pulsed (Note 2))

Avalanche Energy (Repetitive(Note 3))

E_AS

E_AR

135

Power Dissipation

T_C=25℃

Derate above 25°C

P_D

1.07

W/℃

Thermal Resistance,Junction-to-Ambient

Thermal Resistance,Junction-to-Case

Junction and StorageTemperature Range

R_θJA

62.5

0.93

℃/W

R_θJC

T_jT_stg

-55 to +150

℃

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Revision:20170701-P1

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