Datasheet > 10BQ060PBF_10

10BQ060PBF_10

更新时间： 2022-09-10 17:53:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	114K
描述
Schottky Rectifier, 1.0 A

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10BQ060PBF_10 数据手册

VS-10BQ060PbF

Vishay High Power Products

Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.6

UNITS

1 A

T_J= 25 °C

2 A

0.76

0.57

0.69

0.1

Maximum forward voltage drop

See fig. 1

(1)

V_FM

1 A

T_J= 125 °C

2 A

T_J= 25 °C

Maximum reverse leakage current

See fig. 2

(1)

I_RM

V_R= Rated V_R

T_J= 125 °C

5.0

Typical junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

2.0

Maximum voltage rate of charge

dV/dt

10 000

V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J⁽¹⁾, T_Stg

- 55 to 150

°C

Maximum thermal resistance,

junction to lead

(2)

R_thJL

DC operation

°C/W

Maximum thermal resistance,

junction to ambient

R_thJA

0.10

Approximate weight

0.003

oz.

Marking device

Case style SMB (similar DO-214AA)

V1H

Notes

dP_tot

(1)

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

(2)

Mounted 1" square PCB

www.vishay.com

For technical questions, contact: diodestech@vishay.com

Document Number: 94113

Revision: 03-Mar-10

123 4 5 6 7

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