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10AM11 PDF预览

10AM11

更新时间: 2024-01-06 12:03:37
品牌 Logo 应用领域
GHZTECH /
页数 文件大小 规格书
3页 154K
描述
11 Watts, 20 Volts, Class A Linear to 1000 MHz

10AM11 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):4 A配置:Single
最小直流电流增益 (hFE):20最高工作温度:200 °C
极性/信道类型:NPN最大功率耗散 (Abs):41 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

10AM11 数据手册

 浏览型号10AM11的Datasheet PDF文件第2页浏览型号10AM11的Datasheet PDF文件第3页 
10AM11  
11 Watts, 20 Volts, Class A  
Linear to 1000 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55CX, STYLE 2  
The 10AM11 is a COMMON EMITTER transistor capable of providing 11  
Watts of Class A, RF output power to1000 MHz. This transistor is  
specifically designed for general Class A amplifier applications. It utilizes  
gold metalization and diffused ballasting to provide high reliability and  
supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
41 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
50 Volts  
3.5 Volts  
4.0 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to +150oC  
+200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Pout  
Pin  
Pg  
Ft  
VSWR  
Power Out  
Power Input  
Power Gain  
Transition Frequency  
Load Mismatch Tolerance  
F = 1.0 GHz  
Ic = 1.8 A  
Vcc = 20 Volts  
Vce = 20 V, Ic =1.8 A  
11.0  
14.0  
Watts  
Watts  
dB  
1.55  
30:1  
8.5  
2.0  
9.0  
2.5  
GHz  
BVebo  
BVces  
BVceo  
HFE  
Emitter to Base Breakdown  
Collector to Emitter Breakdown  
Collector to Emitter Breakdown  
DC Current Gain  
Output Capacitance  
Thermal Resistance  
Ie = 12 mA  
Ic = 120 mA  
Ic = 120 mA  
Vce = 5 V, Ic = 800 mA  
Vcb = 28V, f =1.0 MHz  
3.5  
50  
24  
20  
Volts  
Volts  
Volts  
Cob  
20  
2.5  
pF  
4.25  
oC/W  
θjc  
Issue February 1996  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT  
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,  
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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